![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
Evolution of Microcracks in Epitaxial CeO2 Thin Films on YSZ-Buffered Si
Epitaxial buffer layers such as ceria (CeO2)/yttria-stabilized zirconia (YSZ) allow the direct integration of functional oxide single crystal thin films on silicon (Si). Microcracks in the buffer layer, often evo...
-
Article
Correction: Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide Hard Mask Lift-Off
-
Article
Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide Hard Mask Lift-Off
Epitaxial complex oxide heterostructures on Si are an excellent platform for the realization of multifunctional electronic devices to exploit the unique functionalities of the oxides that Si does not possess. ...
-
Article
Open AccessLarge-Area, Highly Sensitive SERS Substrates with Silver Nanowire Thin Films Coated by Microliter-Scale Solution Process
A microliter-scale solution process was used to fabricate large-area, uniform films of silver nanowires (AgNWs). These thin films with cross-AgNWs were deposited onto Au substrates by dragging the meniscus of ...
-
Article
Determination of the continuous cooling transformation diagram of a high strength low alloyed steel
The continuous cooling transformation diagram of a high strength low alloyed steel was determined by a dilatometer and microscopic analysis (OM, SEM) as well as thermodynamic analysis. As expected, Widmanstätt...
-
Article
Microstructural evolution in semisolid forging of A356 alloy
A semisolid forging study using A356 alloy was carried out to investigate the evolution of microstructures affected by the solid fraction, the forging pressure and the addition of Sr. The semisolid slurry for ...
-
Article
Controlled hydrothermal growth of multi-length-scale ZnO nanowires using liquid masking layers
In this study, we demonstrate a method for creating multi-length-scale ZnO nanowires in a controllable manner on diverse planar and curvilinear substrates by introducing immiscible liquid masking layers (LMLs)...
-
Article
Open AccessObservation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy
We report the observation of room temperature photoluminescence (PL) emission from GaAs/GaInAs core-multiple-quantum-well (MQW) shell nanowires (NWs) surrounded by AlGaAs grown by molecular beam epitaxy (MBE) ...
-
Article
Peel strength of sputtered FCCL(Flexible Copper Clad Laminate) using Ar:O2 mixed gas preprocessing and a Ni-Cr seed layer
The PI surface was modified with ion beams in a vacuum chamber to increase the surface area. A two-way Design of Experiments (“DOE”) was performed by varying the DC power and changing the proportion of O2 gas wit...
-
Article
Symmetrically functionalized diketopyrrolopyrrole with alkylated thiophene moiety: from synthesis to electronic devices applications
A symmetrically conjugated molecular semiconductor derived from diketopyrrolopyrrole (DPP), i.e., 2,5-dihexadecyl-3,6-bis(5-(3-hexylthiophen-2-yl)thiophen-2-yl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione [DPP(3HT) ...
-
Article
Red fluorescent DCM derivatives with the bulky adamantyl and bicyclo[2,2,2]octyl groups for organic light emitting diodes (OLEDs)
A red fluorescent compound, 4-(dicyanomethylene)-2-(1-pentylbicyclo[2,2,2]oct-4-yl)-6-(1-adamantyl-1,7,7-trimethyljulolidyl-9-enyl)-4H-pyran containing bulky adamantyl and 1-pentylbicyclo[2,2,2]octyl groups on...
-
Article
Design for reliability of ferrite for electronics materials
An accelerated life test for miniaturized ferrite cores used in SMD type inductors is proposed. Conventionally, temperature cycling test is performed to check whether cracks are initiated and propagated or not...
-
Article
Effect of Aluminum Content on the Microstructure and Mechanical Properties of Hypereutectoid Steels
Hypereutectoid steels with 0, 0.69, 1.29, and 1.95 wt pct aluminum were prepared. The samples were hot rolled at 1100 °C followed by cooling in air. The microstructure of the as-rolled samples was characterize...
-
Article
Si-diffused GaN for enhancement-mode GaN mosfet on si applications
Si diffusion into GaN was studied as a function of encapsulant type (SiO2 or SiNx) and diffusion temperature. Using a SiO2 encapsulant, the Si diffusion exhibited an activation energy of 0.57 eV with a prefactor ...
-
Article
Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO
Wet etch rates at 25°C for Zn0.9Mg0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300–1100 nm · min−1 with HCl/H2O (5×10−3−2×10−2 M) and 120–300 nm · min−1 with H3PO4/H2O (5×1...
-
Article
Soft Chemical Routes to Heterostructured High-Tc Superconducting Materials