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Article
Reactive Ion Etching of Molybdenum in CF4/O2 Plasma
A mechanistic study of Mo etching in a CF4/O2 plasma has been performed using optical emission spectroscopy, mass spectrometry and x-ray photoelectron spectroscopy. Etching characteristics of Mo for a wide range ...
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Article
Chemical Beam Epitaxial Growth of GaAs Epilayer on GaAs(100) Substrate Using Unprecracked Arsine and Trimethylgallium
We present preliminary results aimed at investigating the effects of unprecracked arsine and trimethylgallium on the CBE(chemical beam epitaxy) growth of GaAs epilayers. We find that the growth rate rises line...
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Article
Carbon Incorporation in Gaas grown by UHVCVD Using Trimethylgallium and Arsine
We present results of a study on the effect of unprecracked arsine(AsH3) and trimethylgallium(TMGa) on carbon incorporation in UHVCVD(Ultra High Vacuum Chemical Vapor Deposition) grown GaAs epilayers on GaAs(100)...
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Article
The Role of Unprecracked Hydride Species Adsorbed on the GaAs(100) in the Growth of GaAs by Ultrahigh Vacuum Chemical Vapor Deposition Using Trimethylgallium and Triethylgallium
We have grown GaAs epilayers by ultrahigh vacuum chemical vapor deposition(UHVCVD) using adsorbed hydrides and metalorganic compounds via a surface decomposition process. This result indicates that unprecracke...
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Article
Atomic Force Microscopy and Raman Spectroscopy Study of Strain Relaxation in InGaAs ON GaAs(100) Grown by Chemical Beam Epitaxy Using Unprecracked Monoethylarsine
The correlation of surface morphology with strain relaxation in the In0.15Ga0.85As epilayer on GaAs(100) grown by chemical beam epitaxy using unprecracked monoethylarsine has been investigated. The surface morpho...
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Article
Initial Stage of Oxidation on Si(111)-7×7 Surface Investigated by Scanning Tunneling Microscope
The initial oxidation of Si(111)-7×7 surface has been investigated by taking the STM images of samples dosed with oxygen at room temperature and high temperatures between 500 °C and 750 °C. In particular, diff...
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Article
Reduction of Lateral Dimension on InGaAs/GaAs Multilayers on Non-(111)V-Grooved GaAs(100) Substrate by Chemical Beam Epitaxy
We have found that the lateral dimension of InGaAs and GaAs multiple layers can be effectively controlled on non-(111) V-grooved GaAs substrates by chemical beam epitaxy using triethylgallium and trimethylindi...
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Article
Facet Evolution and Selective Growth of GaAs/AlGaAs Lateral Structure Grown by Growth–Interrupted Chemical Beam Epitaxy Using Unprecracked Monoethylarsine
Facet evolution and selective area epitaxy of GaAs/AlGaAs ridge and V-groove structure grown on non-planar GaAs(100) substrate by chemical beam epitaxy(CBE) have been investigated for nanostructure application...
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Article
Nitridation of Si(111)−7×7 Surface by Low Energy Nitrogen Ions: STM Investigation
The surface structure of Si(111) post-annealed at 980 °C after nitrogen ion induced nitridation has been investigated by using a scanning tunneling microscope (STM) and low energy electron diffraction (LEED). ...
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Article
Nitridation of Sapphire Substrate Using Remote Plasma Enhanced-Ultrahigh Vacuum Chemical Vapor Deposition At Low Temperature
A remote plasma enhanced-ultrahigh vacuum chemical vapor deposition (RPE-UHVCVD) system equipped with a radio frequency-inductively coupled plasma (RF-ICP) which produces the reactive nitrogen species was empl...
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Article
Formation of Ni/Pt/Au Ohmic Contacts to p-GaN
We report a new Ni/Pt/Au (20/30/80 nm) metallization scheme to achieve a low ohmic contacts to p-type GaN with a carrier concentration of 9.4 × 1016 cm−3. A Mg-doped GaN layer (0.5 μm) was grown on (0001) sapphir...
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Article
Low Temperature GaN Growth on Nitridated Sapphire Using Remote Plasma Enhanced Ultrahigh Vacuum Chemical Vapor Deposition
GaN epitaxial thin films were grown on a nitridated sapphire at low temperature (550°C) using remote plasma enhanced ultrahigh vacuum chemical vapor deposition system and these films were investigated by Ruthe...
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Article
Surface Characterization of GaN Formation on GaAs(100) Using Ammonia
The GaN formation on GaAs(100) using NH3 has been investigated using synchrotron radiation photoemission spectroscopy and an atomic force microscope (AFM). This study showed the effect of nitridation temperatu...
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Article
The Effect of the Nucleation Layer on the Low Temperature Growth of GaN Using a Remote Plasma Enhanced–Ultrahigh Vacuum Chemical Vapor Deposition (RPE-UHVCVD)
This study investigated the low temperature growth of GaN on a nucleation layer in a remote plasma enhanced-ultrahigh vacuum chemical vapor deposition (RPE-UHVCVD) system which is equipped with an rf plasma ce...
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Article
Charging Effect in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride
Capacitance-voltage was investigated for amorphous silicon quantum dots (a-Si QDs) embedded in a silicon nitride as a function of dot size and nitride thickness. a-Sci QDs were grown by plasma enhanced chemica...
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Article
Full Color Luminescence from Amorphous Silicon Quantum Dots Embedded in Silion Nitride
Amorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silion nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photolumiscence...
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Article
High Quality Non-Alloyed Pt Ohmic Contacts to P-Type GaN Using Two-Step Surface Treatment
Two-step surface-treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2
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Article
Improved Low Resistance Contacts of Ni/Au and Pd/Au to p-Type GaN Using a Cryogenic Treatment
A low resistance Ohmic contact to p-type GaN is essential for reliable operation of electronic and optoelectronic devices. Such contacts have been made using Ni/Au and Pd / Au contacts to p-type Mg-doped GaN (...
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Article
Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN
The electrical and thermal properties of Ru and Ru/Au ohmic contacts on two-step-surface-treated p-GaN have been investigated using current-voltage (I–V) measurements and Auger electron spectroscopy. It is sho...
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Article
Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD
The effect of the growth pressure on the In incorporation in InGaN thin films, grown by metalorganic chemical vapor deposition (MOCVD) have been investigated. The InGaN thin films were grown by varying the gro...
