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Article
Open AccessDeformable micro-supercapacitor fabricated via laser ablation patterning of Graphene/liquid metal
Deformable and miniaturized energy storage devices are essential for powering soft electronics. Herein, we fabricate deformable micro supercapacitors (MSCs) based on eutectic gallium-indium liquid metal (EGaIn...
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Article
Development of a plasma and gas hybrid atomization system for the production of metal powder materials
By applying the optimized DC arc plasma torches (DCAPTs) to gas atomization (GA), the new hybrid atomization (HA) system with three DCAPTs was developed to improve typical GA techniques by using higher superhe...
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Article
Optical and Electrical Properties of Multilayer Grid Electrodes for Highly Durable Transparent Conductive Electrodes
We report on the optical and electrical properties of MgZnO/Ag/MgZnO (MAM) grid electrodes grown at room temperature; these are proposed as an alternative to metal-based grid electrodes to meet the requirement...
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Article
Enhanced Production of 2,3-Butanediol in Recombinant Escherichia coli Using Response Regulator DR1558 Derived from Deinococcus radiodurans
2,3-Butanediol (2,3-BDO) is a promising bio-based chemical for its wide range of applications in industrial areas as synthetic rubber precursor, food additives, and cosmetics. In this study, Escherichia coli DH5α...
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Article
Growth mode control of InGaN on GaN by using SiH4 post-treatment
We report on a way to control the growth mode of an In0.43Ga0.57N layer on GaN by using SiH4 post-treatment. In0.43Ga0.57N islands were formed on the GaN layers by a using Stranski-Krastanov growth mode without S...
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Article
Light extraction efficiency of GaN-based LEDs with non-periodic and periodic sub-wavelength structures
Antireflective non-periodic and periodic sub-wavelength structures (SWSs) are fabricated on indium tin oxide (ITO) layers deposited on p-GaN layers of GaN-based green light-emitting diodes (LEDs). The light outpu...
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Article
High Quality Non-Alloyed Pt Ohmic Contacts to p-Type GaN Using Two-Step Surface Treatment
Two-step surface-treatment is introduced to obtain low resistance Pt contacts toptype GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2Sx
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Article
Improved Low Resistance Contacts of Ni/Au and Pd/Au to p-Type GaN Using a Cryogenic Treatment
A low resistance Ohmic contact to p-type GaN is essential for reliable operation of electronic and optoelectronic devices. Such contacts have been made using Ni/Au and Pd / Au contacts to p-type Mg-doped GaN (...
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Article
A comparison of the recombination efficiency in green-emitting InGaN quantum dots and quantum wells
A comparative investigation of the recombination efficiency of green-emitting InGaN quantum dots (QDs) and quantum wells (QWs) is reported in this paper. Optical investigations using temperature dependent phot...
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Article
Formation of a low-resistance and high reflectivity reflector on p-type GaN with a AgAl Ohmic contact
In this study, we investigate the effect of the Al composition of a AgAl alloy reflector deposited on a p-GaN layer for use in a high-efficiency GaN flip-chip light-emitting diode (FCLED) or n-type sideup vert...
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Article
An Oxidant- and Organic Solvent-Resistant Alkaline Metalloprotease from Streptomyces olivochromogenes
Organic solvent- and detergent-resistant proteases are important from an industrial viewpoint. However, they have been less frequently reported and only few of them are from actinomycetes. A metalloprotease from
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Article
Do** level-dependent dry-etch damage in n-type GaN
The electrical effects of dry-etch on n-type GaN by an inductively coupled Cl2/CH4/H2/Ar plasma were investigated as a function of ion energy, by means of ohmic and Schottky metallization methods. The specific co...
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Article
Electrical properties of nonalloyed Ni/Au ohmic contacts to laser-irradiated p-GaN
We have investigated the KrF excimer laser-irradiation effect on the electrical properties of nonalloyed Ni/Au contacts to p-GaN. It is shown that the samples that were laser-irradiated in N2 ambient produce high...
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Chapter and Conference Paper
Electrical Properties of ZnO
Temperature-dependent Hall-effect measurements have been used to determine donor and acceptor concentrations and energies in n-type and p-type ZnO. Commonly observed donor energies in n-type material grown fro...
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Article
The dot size effect of amorphous silicon quantum dot on 1.54-μm Er luminescence
The role of the size of amorphous silicon quantum dots in the Er luminescence at 1.54 μm was investigated. As the dot size was increased, the more Er ions were located near one dot due to its large surface are...
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Article
Low-resistance and thermally stable Pd/Ru ohmic contacts to p-type GaN
We report on low-resistance and thermally stable Pd/Ru ohmic contacts to surface-treated p-GaN (3 × 1017 cm−3). It is shown that annealing at 500°C for 2 min in a N2 ambient improves ohmic contact properties. Spe...
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Article
Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN
The electrical and thermal properties of Ru and Ru/Au ohmic contacts on two-step-surface-treated p-GaN have been investigated using current-voltage (I–V) measurements and Auger electron spectroscopy. It is sho...
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Article
Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD
The effect of the growth pressure on the In incorporation in InGaN thin films, grown by metalorganic chemical vapor deposition (MOCVD) have been investigated. The InGaN thin films were grown by varying the gro...
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Article
Charging Effect in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride
Capacitance-voltage was investigated for amorphous silicon quantum dots (a-Si QDs) embedded in a silicon nitride as a function of dot size and nitride thickness. a-Sci QDs were grown by plasma enhanced chemica...
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Article
Full Color Luminescence from Amorphous Silicon Quantum Dots Embedded in Silion Nitride
Amorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silion nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photolumiscence...
