2 Result(s)
within
Seong Ju Park
Applied and Technical Physics
Materials Science, general
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Article
High Quality Non-Alloyed Pt Ohmic Contacts to P-Type GaN Using Two-Step Surface Treatment
Two-step surface-treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2
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Article
Improved Low Resistance Contacts of Ni/Au and Pd/Au to p-Type GaN Using a Cryogenic Treatment
A low resistance Ohmic contact to p-type GaN is essential for reliable operation of electronic and optoelectronic devices. Such contacts have been made using Ni/Au and Pd / Au contacts to p-type Mg-doped GaN (...
