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Article
Development of a plasma and gas hybrid atomization system for the production of metal powder materials
By applying the optimized DC arc plasma torches (DCAPTs) to gas atomization (GA), the new hybrid atomization (HA) system with three DCAPTs was developed to improve typical GA techniques by using higher superhe...
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Article
Growth mode control of InGaN on GaN by using SiH4 post-treatment
We report on a way to control the growth mode of an In0.43Ga0.57N layer on GaN by using SiH4 post-treatment. In0.43Ga0.57N islands were formed on the GaN layers by a using Stranski-Krastanov growth mode without S...
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Article
Light extraction efficiency of GaN-based LEDs with non-periodic and periodic sub-wavelength structures
Antireflective non-periodic and periodic sub-wavelength structures (SWSs) are fabricated on indium tin oxide (ITO) layers deposited on p-GaN layers of GaN-based green light-emitting diodes (LEDs). The light outpu...
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Article
A comparison of the recombination efficiency in green-emitting InGaN quantum dots and quantum wells
A comparative investigation of the recombination efficiency of green-emitting InGaN quantum dots (QDs) and quantum wells (QWs) is reported in this paper. Optical investigations using temperature dependent phot...
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Article
Formation of a low-resistance and high reflectivity reflector on p-type GaN with a AgAl Ohmic contact
In this study, we investigate the effect of the Al composition of a AgAl alloy reflector deposited on a p-GaN layer for use in a high-efficiency GaN flip-chip light-emitting diode (FCLED) or n-type sideup vert...
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Chapter and Conference Paper
Electrical Properties of ZnO
Temperature-dependent Hall-effect measurements have been used to determine donor and acceptor concentrations and energies in n-type and p-type ZnO. Commonly observed donor energies in n-type material grown fro...