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    Unified switching mechanism for reversible change between unipolar and bipolar switching modes of oxide resistive switching memory devices

    We demonstrate the coexistence of the unipolar and bipolar switching behaviors in a single oxide resistive device composed of Pt-CuO0.8-W structure and we reveal the switching mechanism by the comprehensive analy...

    Sang-Jun Choi, Ki-Hong Kim, Woo-Young Yang, Sohyeon Kim, Semi Oh… in Applied Physics A (2017)