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    Chapter and Conference Paper

    Hydrodynamic Modeling of AlGaN/GaN HEMTs

    For the needs of high electron mobility transistors (HEMTs) optimization a reliable software simulation tool is required. Due to the high electric field in the device channel a hydrodynamic approach is used to...

    S. Vitanov, V. Palankovski, S. Murad… in Simulation of Semiconductor Processes and … (2007)