-
Article
Die Spektralanalyse der Stehenden Schichten im Plasma der Positiven Säule der Niederdruckentladung in Wasserstoff
The paper deals with the optical spectral analysis of a standing periodic structure in the plasma of a positive column. Both the spectral composition of the radiation of the discharge along the axis of the dis...
-
Article
Oxygen nonstoichiometry and hydrogen bonds in BaTiO3
The origin of hydroxyl in the lattice of barium titanate as a consequence of the reaction of hydrogen with oxygen ions in the lattice is described. A band at the wave number 1770 cm−1 was assigned to this hydroxy...
-
Article
Stationäre Zusammensetzung eines nichtisothermen Plasmas in chemisch reagierenden Medien
-
Article
Wall processes and radial gain of the cw HCN laser
The measurement of the degree of dissociation and a discussion of the formation of excited laser-active HCN molecules are presented. It is shown that HCN molecules formed by chemical reactions on the wall of t...
-
Article
Buchbesprechungen
-
Article
Kinetic study of the heterogeneous Si/H system under low-pressure plasma conditions by means of mass spectrometry
The kinetics of the silicon/hydrogen low-pressure discharge system have been measured using a flow technique and mass spectrometry. Results show that at long residence times the system operates under a partial...
-
Article
Determination of non-homogeneous high-concentration depth distributions using elastic backscattering data
A computer program has been developed by which the depth concentration distribution of a two-element bulk sample can be determined from elastic backscattering data. The presented calculative procedure can be a...
-
Article
Electron-impact-induced anisotropic etching of silicon by hydrogen
The etch rate of silicon in a hydrogen low-pressure discharge plasma can be strongly enhanced by electron bombardment, reaching presently up to ∼1000 Å/min. The etch rate increases linearly with increasing ele...
-
Article
Chemical relaxation study of the heterogeneous silicon-hydrogen system under plasma conditions
The chemical relaxation technique consists of measuring the response of a chemical system to a small disturbance of an equilibrium or a nonequilibrium steady state. Since, for a small perturbation, the respons...
-
Article
Restoration and conservation of ancient artifacts: A new area of application of plasma chemistry
The application of low-pressure hydrogen plasma for the restoration and conservation of iron artifacts has been developed. This method of treatment at temperatures below 400°C is relatively fast and efficientl...
-
Article
Dominant reaction channels and the mechanism of silane decomposition in a H2-Si(s)-SiH4 glow discharge
Chemical relaxation mass spectrometry has been used to study the kinetics and mechanism in the silane-hydrogen-solid silicon system under conditions of glow discharge. The emphasis was on the main processes re...
-
Article
Recent progress in the restoration of archeological metallic artifacts by means of low-pressure plasma treatment
A new method for the restoration and conservation of archeological artifacts made of metals, such as iron, silver, bronze, and others, has been developed and succesfully tested on more than 14,000 objects. Com...
-
Article
Preparation of inorganic materials, surface treatment, and etching in low pressure plasmas: Present status and future trends
The present status and future trends in the chemistry of nonisothermal plasmas of glow and dielectric barrier discharges are summarized. Particular attention is devoted to the surface treatment, plasma etching...
-
Article
The mechanism of plasma-induced deposition of amorphous silicon from silane
Time-resolved mass spectrometric data show that the concentration of di- and trisilane, which are formed from monosilane under discharge conditions typical for the deposition of high electronic quality amorpho...
-
Article
Surface Processes Limiting the High Rate Deposition of High Electronic Quality a-Si
Amorphous silicon of a high electronic quality with σdark ≈ 10−10, σph ≈ 1•10−4 (Ωcm)−1 and density of gap states of about 0.3 to 2•1016 eV−1cm−3 is deposited at rates up to 17 Å/sec. The rate limiting steps are ...
-
Article
Large-area boron carbide protective coatings for controlled thermonuclear research prepared byin situ plasma CVD
Impurity release from the first wall and components facing the hot plasma in Tokamak devices for controlled fusion research and the concomitant pollution of the plasma lead to enhanced energy losses and deuter...
-
Article
Photoluminescence from Microcrystalline Silicon and Related Materials
Intense photoluminescence has been obtained from nanocrystalline silicon prepared in completely dry processing by the optimizing the crystallite size and the chemical passivation of the grain boundaries due to...
-
Article
In situ XPS studies of the deposition of thin films from tetrakis(Dimethylamido)titanium organometallic precursor for diffusion barriers
With the decreasing minimum feature size of integrated microcircuits, a low-temperature, chlorine-free CVD process is needed for the deposition of TiN diffusion barriers. A problem during the thermal depositio...
-
Article
Clusters in a Silane Glow Discharge: Mechanism of Their Formation and How to Avoid Them
The formation of clusters in glow discharge plasma processing is of great concern with respect to the production yield. Their appearance, trap** and transport in silane plasmas have been the subject of sever...
-
Article
The Mechanism of the Plasma Induced Deposition of a-Ge and μc-Ge from Germane: The limits and Possible Alternatives
Time resolved mass spectrometry and the measurement of appearance potentials of various GeH -cationic fragments combined with selfconsistent theoretical modelling have been used to study the mechanism of plasm...
