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    Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate

    We present in this article device characteristics of molecular beam epitaxy grown GaAs/AlGaAs quantum well infrared photodetectors (QWIP) on a semi-insulating GaAs substrate and on a GaAs-on-Si substrate grown...

    D. K. Sengupta, M. B. Weisman, M. Feng, S. L. Chuang… in Journal of Electronic Materials (1998)