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  1. No Access

    Article

    Bandgap Shifting of an Ultra-Thin InGaAs/InP Quantum Well Infrared Photodetector via Rapid Thermal Annealing

    We demonstrate that SiO2 cap rapid thermal annealing in ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much as 292.5 meV...

    D. K. Sengupta, S. Kim, H. C. Kuo, A. P. Curtis… in MRS Online Proceedings Library (1998)

  2. No Access

    Article

    Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate

    We present in this article device characteristics of molecular beam epitaxy grown GaAs/AlGaAs quantum well infrared photodetectors (QWIP) on a semi-insulating GaAs substrate and on a GaAs-on-Si substrate grown...

    D. K. Sengupta, M. B. Weisman, M. Feng, S. L. Chuang… in Journal of Electronic Materials (1998)

  3. No Access

    Article

    Monolithically Integrated Dual-Band Quantum Well Infrared Photodetector

    A monolithic quantum well infrared photodetector (QWIP) structure has been presented that is suitable for dual bands in the two atmospheric transmission windows of 3 - 5.3 fum and 7.5 - 14fum, respectively. Th...

    D. K. Sengupta, S. D. Gunapala, S. V. Bandara, F. Pool… in MRS Online Proceedings Library (1997)