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  1. No Access

    Article

    Characterization of Laterally Selected Si Doped Layer Formed in GaAs Using a Low-Energy FIB-MBE Combined System

    200 eV and 30 keV Si2+ FIB were implanted in an MBE-grown GaAs layer in a dose range of 1012 and 1013 cm-2. Successive overlayer regrowth of the GaAs cap layer and postannealing at 800 °C for 3 - 30 s was perform...

    H. Nakayama, J. Yanagisawa, F. Wakaya, Y. Yuba… in MRS Online Proceedings Library (1996)

  2. No Access

    Article

    Low Energy Ion Irradiation Effect on Electron Transport in Gaas/Algaas Heterostructures

    Effects of low energy ion beam induced damages on transport properties of a two-dimensional electron gas (2DEG) system in GaAs/AlGaAs heterostructures have been investigated. 1 keV Ar ions were irradiated on t...

    J. Yanagisawa, A. Nozawa, Y. Yuba, S. Takaoka, K. Murase… in MRS Online Proceedings Library (1994)