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Chapter and Conference Paper
Electron Beam Nanolithography
Lithography plays a central role in the fabrication of electronic devices, and is essential in the preparation of samples for studies of transport in 1-D. The minimum feature size required in the device is imp...
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Chapter and Conference Paper
Aperiodic Quantum Magnetoresistance Oscillations in Submicron n+GaAs Wires
We have investigated the aperiodic oscillatory structure in the magnetoresistance of small n+GaAs stripes of thickness 50 nm, length 10 μn and widths between 0.09 μm and 0.3 μm. The structure has been studied as ...
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Chapter
Submicron Lithography
Lithography plays a central role in the fabrication of electronic devices. The minimum feature size required in the device is important in the choice of lithographic method. Generally for linewidths above 1μm ...
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Chapter and Conference Paper
Electron Beam Lithography and Dry Etching Techniques for the Fabrication of Quantum Wires in GaAs and AlGaAs Epilayer Systems
Research on transport in low dimensional semiconductor systems has recently progressed from simple layered structures to patterned devices of much greater complexity. The development of fabrication techniques ...
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Chapter
Conduction in n+-GaAs Wires
For clear observation of interference between waves it is a necessary condition that the waves must maintain a constant phase relationship with respect to each other. This coherence is easily achieved with las...
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Chapter
Dry-Etching Damage in Nano-Structures
In the past few years a great deal of new physics has emerged from the examination of structures made in semi-conducting materials with dimensions on a nano-metric scale -some examples are the observation of A...
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Chapter
Radiative Recombination in Free Standing Quantum Boxes
We report photoluminescence measurements made on free standing lattice matched GaAs/AlGaAs and pseudomorphic InGaAs/GaAs quantum boxes fabricated by laterally patterning quantum wells using electron beam litho...
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Chapter
Raman Scattering and Photoluminescence of GaAs-Based Nanostructures
Recent developments in Electron Beam Lithography (EBL) and Reactive Ion Etching (RIE), among other semiconductor fabrication techniques, have enabled semiconductor material to be patterned into arrays of quant...
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Chapter
GaAs Detectors for Physics at the LHC
Over the last two years the Glasgow and CERN-based LAA groups have successfully constructed GaAs detectors for minimum ionising particles with radiation hardness and potential speed which is more than competit...
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Chapter
Microwave Studies of Quasi-One Dimensional Wires
In the past, the electronic transport in quantum wires has mostly been studied using d.c. or low-frequency measuring techniques (Washburn and Webb, 1986; Heinrich et al., 1988). The use of high-frequency electric...
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Chapter
Quantum Wires and Dots: The Challenge to Fabrication Technology
In these lectures I will argue that the fabrication of quantum dots and wires for optical applications presents the severest challenge to semiconductor nanotechnology. The dimensional requirements of these str...
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Chapter and Conference Paper
Finite Element Simulation of Recess Gate MESFETs and HEMTs: The Simulator H2F
In this paper we present a new 2D finite element compound semiconductor device simulator H2F suited for simulation of the parasitic effects in recess gate MESFETs and HEMTS. Several simulation examples of real...
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Chapter
Fabrication and Simulation of 0.1 μm Pseudomorphic HEMTs
When the gate length of the pseudomorphic HEMTs (PsHEMTs) approaches 0.1 μm, short channel effects become limiting factor for the device performance, leading to a large negative threshold voltage shift, increa...
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Chapter and Conference Paper
Finite Element Monte Carlo Simulation of Recess Gate FETs
In this paper we report on a new Monte Carlo (MC) module incorporated in our Heterojunction 2D Finite element FET simulator H2F [1]. For the first time this module combines a precise description of the device ...
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Chapter
Basic of Pseudomorphic Hemts Technology and Numerical Simulation
This chapter consist of two parts. In the first part we describe the technology used in the Nanoelectronics Research Centre of Glasgow University for fabrication of high performance 200 - 100 nm gate length Ps...
