7 Result(s)
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Chapter
Basic of Pseudomorphic Hemts Technology and Numerical Simulation
This chapter consist of two parts. In the first part we describe the technology used in the Nanoelectronics Research Centre of Glasgow University for fabrication of high performance 200 - 100 nm gate length Ps...
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Chapter
Microwave Studies of Quasi-One Dimensional Wires
In the past, the electronic transport in quantum wires has mostly been studied using d.c. or low-frequency measuring techniques (Washburn and Webb, 1986; Heinrich et al., 1988). The use of high-frequency electric...
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Chapter
Quantum Wires and Dots: The Challenge to Fabrication Technology
In these lectures I will argue that the fabrication of quantum dots and wires for optical applications presents the severest challenge to semiconductor nanotechnology. The dimensional requirements of these str...
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Chapter
Conduction in n+-GaAs Wires
For clear observation of interference between waves it is a necessary condition that the waves must maintain a constant phase relationship with respect to each other. This coherence is easily achieved with las...
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Chapter
Dry-Etching Damage in Nano-Structures
In the past few years a great deal of new physics has emerged from the examination of structures made in semi-conducting materials with dimensions on a nano-metric scale -some examples are the observation of A...
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Chapter
Radiative Recombination in Free Standing Quantum Boxes
We report photoluminescence measurements made on free standing lattice matched GaAs/AlGaAs and pseudomorphic InGaAs/GaAs quantum boxes fabricated by laterally patterning quantum wells using electron beam litho...
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Chapter
Raman Scattering and Photoluminescence of GaAs-Based Nanostructures
Recent developments in Electron Beam Lithography (EBL) and Reactive Ion Etching (RIE), among other semiconductor fabrication techniques, have enabled semiconductor material to be patterned into arrays of quant...
