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  1. No Access

    Article

    Influence of Bonding Temperature and Applied Load on the Bonding Integrity and Optical Performance of Face-Down Bonded Ridge-Waveguide Lasers

    The effects of bonding temperature and applied load on the mechanical integrity of 80Au-20Sn solder joints and the optical performance of laser diodes (LDs) are presented. Insufficient solder wetting at 280°C ...

    J.W. Ronnie Teo, Z.F. Wang, X.Q. Shi, G.Y. Li, S. Yuan in Journal of Electronic Materials (2007)

  2. No Access

    Article

    Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation

    Ridge-waveguide InGaAsN triple-quantum-well strain-compensated lasers grown by metal organic chemical vapor deposition were fabricated with pulsed anodic oxidation. The laser’s output power reached 145 mW in c...

    Y. Qu, J.X. Zhang, A. Uddin, C.Y. Liu, S. Yuan, M.C.Y. Chan, B. Bo… in Applied Physics A (2006)

  3. No Access

    Article

    Growth of β-Ga2O3 nanoparticles by pulsed laser ablation technique

    This work investigates pulsed laser ablation for Ga2O3 nanoparticles. Nanoparticles with diameters of 10 to 500 nm were deposited on silicon substrates in large quantities, by KrF excimer laser ablation of a GaN ...

    H.M. Lam, M.H. Hong, S. Yuan, T.C. Chong in Applied Physics A (2004)

  4. No Access

    Article

    In0.2Ga0.8As/GaAs quantum well laser with C doped cladding and ohmic contact layers

    Carbon do** in AlxGa1−xAs was achieved using different approaches. The moderate growth temperature of 650°C was employed to grow C bulk-doped AlxGa1−xAs with a high Al mole fraction. The hole-density was altere...

    G. Li, S. Yuan, H. H. Tan, X. Q. Liu, S. J. Chua… in Journal of Electronic Materials (1998)

  5. No Access

    Article

    Quantum Well Intermixing for Optoelectronic Applications

    Ion implantation induced intermixing of GaAs-AlGaAs quantum well structures with H, O and As ions is investigated by low temperature photoluminescence. Large energy shifts are observed in all the cases, though...

    C. Jagadish, H. H. Tan, S. Yuan, M. Gal in MRS Online Proceedings Library (1997)

  6. No Access

    Article

    Scaling the c-axis resistive transitions of single crystalline La1.86Sr0.14CuO4 for fields parallel to the c-axis

    It was recently suggested that the out-of-plane resistive dissipation in the high-T c systems could be quantitatively described in terms of the extended Josephson coupling model that accounts for both effective t...

    S. Yuan, K. Kadowaki, Z. Yang, H. Takeya, T. Kimura, K. Kishio in Applied Physics A (1994)