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10 Result(s)

within R S Gupta Remove this filter Characterization and Evaluation of Materials Remove this filter

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  1. No Access

    Article

    Radiation-Sensitive AlGaN/GaN MOS-HEMT-Based Dosimeter

    An AlGaN/GaN MOS-HEMT (metal oxide semiconductor–high electron mobility transistor)-based dosimeter has been proposed to demonstrate and evaluate the impact of absorbed doses of radiations by virtue of interfa...

    Ruby Mann, Sonam Rewari, Praveen Pal, Shobha Sharma… in Journal of Electronic Materials (2022)

  2. No Access

    Article

    Analytical modeling of dual-metal gate stack engineered junctionless accumulation-mode cylindrical surrounding gate (DMGSE-JAM-CSG) MOSFET

    This paper proposes a physics-based 2-D analytical model for a dual- material gate stack engineered junctionless accumulation-mode cylindrical surrounding gate (DMGSE-JAM-CSG) MOSFET. Analytical modeling is pe...

    Sumedha Gupta, Neeta Pandey, R. S. Gupta in Applied Physics A (2021)

  3. No Access

    Article

    Performance evaluation of dielectric modulation and metalloid T-shaped source/drain on gate-all-around junctionless transistor for improved analog/RF application

    In this work, the impact of SiO2 dielectric channel modulation along with metalloid T-shaped source-drain on the analog-RF characteristics of gate-all-around Junctionless Nanowire Transistor (JNT) has been analys...

    Yogesh Pratap, Sachin Kumar, R. S. Gupta… in Journal of Materials Science: Materials in… (2021)

  4. No Access

    Article

    Novel Dual-Metal Junctionless Nanotube Field-Effect Transistors for Improved Analog and Low-Noise Applications

    Dual-metal junctionless nanotube field-effect transistors (DMJN-TFETs) for improvised analog and digital applications are described. It has been realized that, compared with existing junctionless nanowire FETs...

    Anubha Goel, Sonam Rewari, Seema Verma, R. S. Gupta in Journal of Electronic Materials (2021)

  5. No Access

    Article

    SOI Schottky Barrier Nanowire MOSFET with Reduced Ambipolarity and Enhanced Electrostatic Integrity

    The proposed silicon-on-insulator Schottky barrier (SOI-SB) nanowire metal–oxide–semiconductor field-effect transistor (NW-MOSFET) is extensively investigated to further improve its analog/radiofrequency (RF) ...

    Amit Saxena, Manoj Kumar, R. K. Sharma, R. S. Gupta in Journal of Electronic Materials (2020)

  6. No Access

    Article

    Physics-based analytic modeling and simulation of gate-induced drain leakage and linearity assessment in dual-metal junctionless accumulation nano-tube FET (DM-JAM-TFET)

    Physics-based analytical model is proposed in this paper which analyzes the effect of temperature, channel length and silicon film radius on gate-induced drain leakages (GIDL) in dual-metal junctionless accumu...

    Anubha Goel, Sonam Rewari, Seema Verma, R. S. Gupta in Applied Physics A (2020)

  7. No Access

    Article

    Interface trap-dependent linearity assessment in single and dual metal gate junctionless accumulation mode (surrounding gate) nanowire MOSFET

    This paper examines the reliability issue of single metal gate (SMG) and dual metal gate (DMG) junctionless accumulation mode surrounding gate (JAM-SG) MOSFET. The impact of trap charges has also been consider...

    Nitin Trivedi, Subhasis Haldar, S. S. Deswal, Mridula Gupta… in Applied Physics A (2019)

  8. No Access

    Article

    Charge plasma technique based do**less accumulation mode junctionless cylindrical surrounding gate MOSFET: analog performance improvement

    A charge plasma technique based do**less (DL) accumulation mode (AM) junctionless (JL) cylindrical surrounding gate (CSG) MOSFET has been proposed and extensively investigated. Proposed device has no physica...

    Nitin Trivedi, Manoj Kumar, Subhasis Haldar, S. S. Deswal… in Applied Physics A (2017)

  9. No Access

    Article

    Improved analog and AC performance with increased noise immunity using nanotube junctionless field effect transistor (NJLFET)

    In this paper for the first time, the noise immunity and analog performance of nanotube junctionless field effect transistor (NJLFET) has been investigated. Small signal AC performance metrics namely Scatterin...

    Sonam Rewari, Vandana Nath, Subhasis Haldar, S. S. Deswal, R. S. Gupta in Applied Physics A (2016)

  10. No Access

    Article

    Kinetic study of thermal decomposition of calcium carbonate in the presence of K2CO3 and BaCO3

    W. U. Malik, D. R. Gupta, I. Masood, R. S. Gupta in Journal of Materials Science Letters (1985)