35 Result(s)
within
Paul O’Brien
Characterization and Evaluation of Materials
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Article
Open AccessChemical vapor deposition of tin sulfide from diorganotin(IV) dixanthates
We report the synthesis and single-crystal X-ray characterization of diphenyltin bis(2-methoxyethylxanthate) and diphenyltin bis(iso-butylxanthate). These xanthates have been used as a single-source precursor to ...
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Article
CdS thin films deposition by AACVD: effect of precursor type, decomposition temperature and solvent
Hexagonal cadmium sulfide (CdS) thin films were deposited on glass substrates by aerosol assisted chemical vapour deposition (AACVD) using cadmium(II) dithiocarbamate and xanthate complexes in tetrahydrofuran ...
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Article
PbS x Se1−x thin films from the thermal decomposition of lead(II) dodecylxanthate and bis(N,N-diethyl-N′-naphthoylselenoureato)lead(II) precursors
Thin films of PbS x Se(1−x) (0 ≤ x ≤ 1) have been deposited by spin coating of bis(dodecylxanthato)lead(II) (1) and/or bis(N,N-diethyl-N′-naphthoylselenoureato)lead(II) (2) compl...
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Article
Open AccessThe deposition of thin films of cadmium zinc sulfide Cd1−x Zn x S at 250 °C from spin-coated xanthato complexes: a potential route to window layers for photovoltaic cells
Thin films of Cd1−x Zn x S (CZS) were prepared by a novel spin coating/melt method from cadmium ethylxanthato [Cd(C2H5OCS2)2] and zinc ethylxanthato [Zn(...
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Article
Open AccessThe synthesis and characterization of Cu2ZnSnS4 thin films from melt reactions using xanthate precursors
Kesterite, Cu2ZnSnS4 (CZTS), is a promising absorber layer for use in photovoltaic cells. We report the use of copper, zinc and tin xanthates in melt reactions to produce Cu2ZnSnS4 (CZTS) thin films. The phase of...
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Article
Open AccessA facile method for the production of SnS thin films from melt reactions
Tin(II)O-ethylxanthate [Sn(S2COEt)2] was prepared and used as a single-source precursor for the deposition of SnS thin films by a melt method. Polycrystalline, (111)-orientated, orthorhombic SnS films with contro...
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Article
Chemical Bath Deposition of Zinc Sulfide from Acidic Solutions
At present, the soft processing of materials attracts considerable interest. Chemical bath deposition (CBD) effects film formation by means of a controlled chemical reaction. Adherent, uniform and reproducible...
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Article
New Approach Towards The Deposition of I-III-VI Thin Films
The ternary chalcopyrite semiconductor Cu(In/Ga)(Se/S)2 is currently used as an absorber layer in high efficiency thin film solar cells. In this study, various types of I-III-VI (I = Cu, III = Ga or In, VI = S or...
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Article
Improved Routes to Nanocrystalline Metal Oxide Films for Dye-Sensitised Solar Cells and Related Applications
Nanoporous metal oxide thin films are currently attracting interest for a wide range of electronic applications, including sensors and dye-sensitised photovoltaic cells. However, limited, and poorly controlled...
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Article
Improved Routes towards Solution Deposition of Indium Sulfide Thin Films for Photovoltaic Applications
Conditions necessary for the reproducible deposition of pristine In2S3 thin films on TO-glass substrates by low temperature solution deposition have been identified. Baths containing carboxylic acids yield adhere...
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Article
Influence of Zinc on the Formation of Granules of Calcium Pyrophosphate
Accumulation of metals in inorganic granules is very common in invertebrates. The formation of metal deposits in both intra- and extracellular sites can be seen as a process for the detoxification of heavy met...
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Article
Single-Source Approach for The Growth of I-III-VI Thin Films
The ternary chalcopyrite semiconductors I-III-VI are currently used for photovoltaic solar cell applications. In this study, AgIn5S8 thin films were prepared from a series of single-source bimetalorganic precurso...
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Article
Metal-Organic Chemical Vapour Deposition of II-VI Semiconductor Thin Films Using Single-Source Approach
Thin films of CdS and CdSe have been deposited on glass substrates by low pressure metal-organic chemical vapour deposition (LP-MOCVD) using Cd[(EPiPr2)2N]2 (E = S, Se) as single-source precursors. These air-stab...
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Article
ZnS, CdS and ZnxCd1−xS Thin Films from Zn(II) and Cd(II) Complexes of 1, 1, 5, 5-Tetramethyl -2-4-dithiobiuret As Single Molecular Precursors
Synthesis of zinc and cadmium complexes of 1, 1, 5, 5-tetramethyl-2-4-dithiobiuret (M(N(SCNMe2)2)2) (M = Zn, Cd) is described together with X-ray single crystal of cadmium complex. These complexes have been used ...
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Article
Synthesis of GaS Nanoparticles from a Single-Source Precursor [Ga(S2CNEt2)3/
GaS nanoparticles have been synthesized by thermolysis of [Ga(S2CNEt2)3] in 4- ethylpyridine. Their absorption spectrum give a band edge at 440 nm (band gap,3.0 eV). XRD pattern showed abroad peaks corresponding ...
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Article
The General Synthesis of Nanostructured V/VI Semiconductors
Semiconductors in the V/VI series have band gaps ranging from 2.2 eV for Sb2S3 to 0.21 eV for Bi2Te3 spanning the range seen from conventional mid to narrow band gap materials to semi-metals. These materials, esp...
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Article
New Routes To Metal Chalcogenide Nanostructures
There is considerable current interest in the synthesis of metal chalcogenide nanostructured materials1 especially for the manufacture of so called 3rd generation solar cells. The facile, large scale, synthesis o...
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Article
Deposition of II/VI thin films from Novel Single-Source Precursors
The compound [MeCd(SePiPr2)2N]2 is used as a single-source precursor to cadmium selenide films in a low-pressure chemical vapour deposition process. Thermogravimetric analysis (TGA) shows that the precursor is re...
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Article
New Approaches to Chemical Bath Deposition of Chalcogenides
We have been studying new approaches to conventional Chemical Bath Deposition (CBD) of chalcogenide containing materials, using continuous circulation and replenishment of CBD solution over a heated substrate....
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Article
Group III Metal Sulfide Thin Films From Single-Source Precursors by Chemical Vapor Deposition (CVD) Techniques
Several single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3t...
