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  1. No Access

    Article

    Modeling of the Diffusion of Hydrogen in Silicon

    A model is proposed to describe hydrogen motion in silicon near 150°C. This model leads to a consistent view of H° behaviour in low doped n and p-type Si, with a diffusivity in agreement with the high temperat...

    D. Mathiot, D. Ballutaud, P. De Mierry, M. Aucouturier in MRS Online Proceedings Library (1989)

  2. No Access

    Article

    Hydrogen Diffusion in N-Type Silicon.Comparison With P-Type Silicon

    Deuterium diffusion profiles in medium phosphorus doped silicon (1016 and 1017 cm-3) at two different deuteration temperatures (120 and 150°C) are simulated with an improved version of a previously reported model...

    R. Rizk, P. De Mierry, D. Ballutaud, M. Aucouturier… in MRS Online Proceedings Library (1990)

  3. Article

    Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.

    Incorporation of Mg in metalorganic vapour phase epitaxy (MOVPE) GaN has been investigated, using two different Mg precursors: bis-methylcyclopentadienyl magnesium [(MeCp)2Mg] and Solution bis-cyclopentadienyl ma...

    P. de Mierry, B. Beaumont, E. Feltin… in MRS Internet Journal of Nitride Semiconduc… (2020)

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