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    Article

    Light-induced defects in plasma-hydrogenated InP: Zn

    PhotoLuminescence (PL) measurements are used to investigate the effects of a H2 plasma treatment in heavily doped p-type InP: Zn. Beside the large decrease in free hole concentration in the hydrogenated samples, ...

    P. de Mierry, R. Madelon, F. Cruège, R. Rizk in Applied Physics A (1995)

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    Chapter and Conference Paper

    STEM investigations of (In,Ga)N/GaN quantum wells

    Nanostructures of III-N semiconductors have a great commercial potential due to their optoelectronic properties. The structural and chemical characteristics of such structures determine the performance of the ...

    P. Manolaki, I. Häusler, H. Kirmse… in EMC 2008 14th European Microscopy Congress… (2008)