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Chapter and Conference Paper
STEM investigations of (In,Ga)N/GaN quantum wells
Nanostructures of III-N semiconductors have a great commercial potential due to their optoelectronic properties. The structural and chemical characteristics of such structures determine the performance of the ...
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Article
Light-induced defects in plasma-hydrogenated InP: Zn
PhotoLuminescence (PL) measurements are used to investigate the effects of a H2 plasma treatment in heavily doped p-type InP: Zn. Beside the large decrease in free hole concentration in the hydrogenated samples, ...