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  1. No Access

    Article

    Lifetime of excitons localized in Si nanocrystals in amorphous silicon

    The introduction of nanocrystals plays an important role in improving the stability of the amorphous silicon films and increasing the carrier mobility. Here we report results of the study on the photoluminesce...

    O. B. Gusev, A. V. Belolipetskiy, I. N. Yassievich, A. V. Kukin in Semiconductors (2016)

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    Article

    On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2) with time-modulated dc magnetron plasma

    Activation of the process of amorphous-silicon-nanocluster formation in a hydrogenated amorphous- silicon suboxide matrix with time-modulated dc discharge plasma is investigated. The plasma is modulated by rep...

    Yu. K. Undalov, E. I. Terukov, O. B. Gusev, I. N. Trapeznikova in Semiconductors (2016)

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    Article

    Effect of surface Si-Si dimers on photoluminescence of silicon nanocrystals in the silicon dioxide matrix

    The effect of surface states of silicon nanocrystals embedded in silicon dioxide on the photoluminescent properties of the nanocrystals is reported. We have investigated the time-resolved and stationary photol...

    O. B. Gusev, A. V. Ershov, D. A. Grachev in Journal of Experimental and Theoretical Ph… (2014)

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    Article

    Trions in silicon nanocrystals in an amorphous hydrogenated silicon matrix

    A simple theoretical model of the radiative recombination in amorphous hydrogenated silicon films containing silicon nanocrystals is suggested. This material is used for the fabrication of modern thin-film sol...

    A. V. Belolipetskiy, O. B. Gusev, A. P. Dmitriev, E. I. Terukov in Semiconductors (2014)

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    Article

    Light emission from silicon nanocrystals

    The main experimental results of studies of the photoluminescence of silicon nanocrystals and theoretical methods developed for the description of optical processes occurring in them are reviewed. Special atte...

    O. B. Gusev, A. N. Poddubny, A. A. Prokofiev, I. N. Yassievich in Semiconductors (2013)

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    Article

    Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiO x :H 〈Er,O〉, by dc-magnetron deposition

    The results of a comprehensive study of the conditions for growing a-SiO x :H 〈Er,O〉 films are presented. The effect of the composition of various erbium-containing targets (a-Si...

    Yu. K. Undalov, E. I. Terukov, O. B. Gusev, V. M. Lebedev in Semiconductors (2011)

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    Article

    Luminescence of amorphous silicon nanoclusters

    Films of amorphous silicon suboxide α-SiO x containing amorphous silicon nanoclusters have been grown by direct current magnetron sputtering. It has been found that two radiatio...

    O. B. Gusev, J. S. Vainshtein, Yu. K. Undalov, O. S. Yeltsina in JETP Letters (2011)

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    Article

    Energy transfer between silicon nanocrystals

    It is shown that the energy migration between silicon nanocrystals embedded into a silicon dioxide host is caused by the “nonresonant” dipole-dipole interaction. This process is efficient only for a part of sm...

    O. B. Gusev, A. A. Prokofiev, O. A. Maslova, E. I. Terukov in JETP Letters (2011)

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    Article

    Thermally induced defect photoluminescence in hydrogenated amorphous silicon

    The intrinsic defect photoluminescence of hydrogenated amorphous silicon (a-Si:H) films has been investigated at high intensities of optical pum** that lead to heating of the film. It has been revealed that, fo...

    O. B. Gusev, E. I. Terukov, Yu. K. Undalov, K. D. Tsendin in Physics of the Solid State (2011)

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    Article

    Effect of electric field in the course of obtaining a-SiO x :H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions

    The effect of electric field on the elemental composition and photoluminescence of films of amorphous hydrogenated silicon doped with erbium and oxygen (a-SiO x :H(Er, O)) in the...

    Yu. K. Undalov, E. I. Terukov, O. B. Gusev, V. M. Lebedev in Semiconductors (2008)

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    Article

    Excitation of erbium in the heterogeneous nanocrystalline matrix of amorphous silicon

    The erbium photoluminescence decay kinetics at a wavelength of 1.54 μm in amorphous hydrogenated silicon films obtained at high oxygen concentrations in a magnetron gas discharge is investigated. Optically act...

    M. S. Bresler, O. B. Gusev, E. I. Terukov, Yu. K. Undalov in Physics of the Solid State (2008)

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    Article

    Luminescence in the 1.54 µm region for erbium in two-dimensional and three-dimensional mesoscopic structures

    We have studied the luminescence and luminescence excitation spectra of erbium in the 1.54 µm region in titanium oxide and silicon oxide xerogels, formed in the mesoscopic pores of three-dimensional synthetic ...

    N. V. Gaponenko, G. K. Malyarevich, A. V. Mudryi in Journal of Applied Spectroscopy (2007)

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    Article

    The influence of molecular structure modification on the photoluminescence and optical absorption of thin copper phthalocyanine films in the near-IR range

    We have studied the luminescence and optical absorption of thin films of copper phthalocyanine (CuPc) with a modified molecular structure of the peripheral fragments. The coefficient of absorption in the near-...

    A. G. Kazanskii, E. I. Terukov, A. V. Ziminov, O. B. Gusev in Technical Physics Letters (2005)

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    Article

    The effect of erbium and oxygen on the photoluminescence intensity of erbium and the composition of a-SiOx:(H, Er, O) films deposited by DC magnetron sputtering

    The effect of the oxygen content ( \(C_{O_2 } \) ) in the gas mixture (20% of SiH4 + 80% of Ar) + O2 and the surface ...

    Yu. K. Undalov, E. I. Terukov, O. B. Gusev, V. Kh. Kudoyarova in Semiconductors (2005)

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    Article

    Analysis of the gain and luminescence properties of Si/Si1−x Gx: Er/Si heterostructures produced by sublimation molecular-beam epitaxy in a gas phase

    Si/Si1−x Gex: Er/Si structures grown by sublimation molecular-beam epitaxy (SMBE) in a gas phase are studied. These structures are considered possible structures for realizing a Si/Er-based laser. It is shown tha...

    L. V. Krasil’nikova, M. V. Stepikhova, Yu. N. Drozdov in Physics of the Solid State (2005)

  16. No Access

    Article

    Erbium excitation in a SiO2: Si-nc matrix under pulsed pum**

    The photoluminescence of Er3+ ions in a SiO2 matrix containing silicon nanocrystals 3.5 nm in diameter is studied under resonant and nonresonant pulsed pum** with pulses 5 ns in duration. The effective erbium e...

    O. B. Gusev, M. Wojdak, M. Klik, M. Forcales in Physics of the Solid State (2005)

  17. No Access

    Article

    Photoluminescence of erbium ions in titanium oxide xerogel in porous anodic alumina matrices

    It is shown that the structures of erbium-doped titanium oxide xerogel/porous anodic alumina manifest strong photoluminescence at 1.53 µm due to the 4I13/24I15/2 transition of Er3+ ions in the xerogel. In the ti...

    N. V. Gaponenko, D. A. Tsirkunov, G. K. Malyarevich in Journal of Applied Spectroscopy (2005)

  18. No Access

    Article

    Edge electroluminescence of silicon: An amorphous-silicon-crystalline-silicon heterostructure

    Silicon edge electroluminescence (EL) was observed on an amorphous-silicon-crystalline-silicon heterostructure (a-Si: H(n)/c-Si(p)) in the temperature range from 77 to 300 K. The room-temperature EL internal quan...

    M. S. Bresler, O. B. Gusev, E. I. Terukov, A. Froitzheim in Physics of the Solid State (2004)

  19. No Access

    Article

    Electroluminescence efficiency of silicon diodes

    The intrinsic electroluminescence (EL) of a silicon light-emitting diode with a forward-biased p-n junction is studied. The substantial enhancement of the integrated EL intensity observed with the temperature inc...

    M. S. Bresler, O. B. Gusev, B. P. Zakharchenya in Physics of the Solid State (2004)

  20. No Access

    Article

    Si Nanocrystals as Sensitizers for Er PL in SiO2

    Sensitization of Er3+ photoluminescence in SiO2 layers by silicon nanocrystals has been investigated under resonant and nonresonant pulsed optical pum**. We observed that the very efficient channel of erbium ex...

    M. Forcales, M. Wojdak, M. A. J. Klik, T. Gregorkiewicz in MRS Online Proceedings Library (2003)

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