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    In Situ Investigation of the Low Pressure MOCVD Growth of Lattice-Mismatched Semiconductors using Reflectance Anisotropy Measurements

    The growth of InAs on InP and InP on GaAs is investigated using Reflectance Anisotropy (RA) measurements. Very large optical anisotropies are observed, related to the three-dimensional growth mode of these mat...

    O. Acher, S. M. Koch, F. Omnes, M. Defour… in Condensed Systems of Low Dimensionality (1991)