15 Result(s)
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Article
Structural and Magnetic Properties of Well-Ordered Inverted Core-Shell α-Cr2O3/ α-MxCr2-xO3 (M=Co, Ni, Mn, Fe) Nanoparticles
Magnetic core shell nanoparticles (NPs) have potential for applications in magnetic random access memory, spintronic devices, and drug delivery systems. Our investigations are focused on the synthesis of inver...
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Article
The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
Successive growth of thick GaN layers separated by either LT-GaN or LT-AlN interlayers have been investigated by transmission electron microscopy techniques. One of the objectives of this growth method was to ...
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Article
Mg Segregation, Difficulties of P-Do** in GaN
Transmission electron microscopy has been used to study defects formed in Mg-doped GaN crystals. Three types of crystals have been studied: bulk crystals grown by a high pressure and high temperature process w...
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Article
Effect of the Do** and the Al Content on the Microstructure and Morphology of Thin AlxGa1t-xN Layers Grown by MOCVD
AlxGa1−xN {x=30% (doped and undoped), 45% (doped)} thin films were grown by MOCVD on ∼2 µm thick GaN layer using Al2O3 substrate. These films were designed to be the active parts of HFETs with nsí product of abou...
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Article
Tem Study of Defects in Laterally Overgrown GaN Layers
Transmission electron microscopy was applied to study defects in laterally overgrown GaN layers, with initial growth on A12O3 substrates followed by further growth over SiO2 masks. Dislocations found in the overg...
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Article
Atomic Scale Analysis of InGaN Multi-Quantum Wells
InGaN multiquantum wells grown by MOCVD on GaN have been investigated by transmission electron microscopy techniques and numerical analysis of high resolution (HREM) images. One objective of this research was ...
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Article
TEM Study of Mg-Doped Bulk GaN Crystals
Transmission electron microscopy was applied to cross-sectioned samples to study surface morphology, sample polarity and defect distribution in bulk GaN samples doped with Mg. These crystals were grown from a ...
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Article
The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
Successive growth of thick GaN layers separated by either LT-GaN or LT-AlN interlayers have been investigated by transmission electron microscopy techniques. One of the objectives of this growth method was to ...
-
Article
Mg Segregation, Difficulties of P-Do** in GaN
Transmission electron microscopy has been used to study defects formed in Mg-doped GaN crystals. Three types of crystals have been studied: bulk crystals grown by a high pressure and high temperature process w...
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Article
Effect of the Do** and the Al Content on the Microstructure and Morphology of Thin AlxGa1−xN Layers Grown by MOCVD
AlxGa1−xN {x=30% (doped and undoped), 45% (doped)} thin films were grown by MOCVD on ∼2 μm thick GaN layer using Al2O3 substrate. These films were designed to be the active parts of HFETs with nsμ product of abou...
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Article
TEM Study of Defects in Laterally Overgrown GaN Layers
Transmission electron microscopy was applied to study defects in laterally overgrown GaN layers, with initial growth on Al2O3 substrates followed by further growth over SiO2 masks. Dislocations found in the overg...
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Article
Polarity of GaN
Convergent beam electron diffraction (CBED) was applied to study polarity of GaN heterolayers grown by MOCVD on sapphire and SiC substrates and also mechano-chemically polished bulk GaN platelet crystals grown...
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Article
Atomic Structure of the Interfaces Between Silicon Directly Bonded Wafers
The so-called Direct Wafer Bonding (DWB) technique opens new possibilities for the electronic industry but still suffers from the poor knowledge we have of the microstructure of these interfaces and hence of t...
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Article
Direct Wafer Bonding of Preamorphized Silicon Wafers.
This paper presents the comparison of the structural and electrical characteristics of Si/Si bonded interfaces depending on whether the surface layers were rendered amorphous by high dose ion implantation prio...
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Article
TEM Study of High Quality GaN Grown by OMVPE Using an Intermediate Layer
We report on high quality GaN layers grown with the use of one intermediate layer. The defect analysis shows that the density of dislocation is only 8×107/cm2 in these layers, compared to over 1010/cm2 for layers...
