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    Strain-free, ultra-high purity ZnSe layers grown by molecular beam epitaxy

    ZnSe layers have been grown by molecular beam epitaxy on high-purity, high-quality ZnSe wafers [(100) oriented] cut from ingots grown by the iodine vapor transport method. Photoluminescence (PL) analysis indic...

    R. M. Park, C. M. Rouleau, M. B. Troffer, T. Koyama… in Journal of Materials Research (1990)