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    Article

    Controlled switching between quantum states in the exciton–polariton condensate

    Optically controlled switching between modes of a polariton laser having different symmetries has been demonstrated experimentally. The microscopic shift of the optical excitation spot dramatically changes the...

    V. A. Lukoshkin, V. K. Kalevich, M. M. Afanasiev, K. V. Kavokin in JETP Letters (2016)

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    Article

    Nuclear Spin relaxation mediated by Fermi-edge electrons in n-type GaAs

    A method based on the optical orientation technique was developed to measure the nuclear-spin lattice relaxation time T 1 in semiconductors. It was applied to bulk n-type GaAs, where T ...

    M. Kotur, R. I. Dzhioev, K. V. Kavokin, V. L. Korenev, B. R. Namozov in JETP Letters (2014)

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    Article

    Spin polarization dynamics and the Hanle effect for a strong exchange interaction in the exciton

    The exciton spin dynamics in a quantum well with a magnetic field applied in its plane is analyzed theoretically. The exchange interaction between the electron and the hole is assumed to be strong. The width o...

    I. S. Gagis, K. V. Kavokin, A. V. Kudinov in Physics of the Solid State (2007)

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    Article

    The hanle effect in nonuniformly doped GaAs

    Spin density distribution in the GaAs/AlGaAs heterostructure was studied under steady-state optical orientation conditions. A comprehensive analysis of the dynamics and relaxation processes responsible for the...

    R. I. Dzhioev, B. P. Zakharchenya, K. V. Kavokin in Physics of the Solid State (2003)

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    Article

    Nonradiative recombination and kinetics of optically oriented electrons at the GaAs/AlGaAs interface

    It is shown that optical orientation of electron spins in semiconductors can be used as a basis to develop a high-sensitivity method for measuring the dependence of the lifetime of carriers on their concentrat...

    R. I. Dzhioev, K. V. Kavokin in Physics of the Solid State (2003)

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    Article

    The anomalous Hanle effect in semimagnetic semiconductor quantum wells

    The behavior of the optical-orientation signal under resonant optical excitation of localized excitons in quantum wells with semimagnetic layers was studied both experimentally and theoretically. The most rema...

    A. V. Kudinov, Yu. G. Kusraev, I. A. Merkulov, K. V. Kavokin in Physics of the Solid State (2003)

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    Article

    Magnetic polarons in semimagnetic-semiconductor-based heterostructures

    Specific features in the behavior of localized magnetic polarons formed under optical excitation in heterostructures based on semimagnetic semiconductors are considered. These features are due to the strong an...

    K. V. Kavokin, I. A. Merkulov, D. R. Yakovlev in Physics of the Solid State (1998)

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    Article

    Luminescence polarization and spontaneous lowering of symmetry caused by magnetic-polaron formation in semimagnetic-semiconductor quantum wells

    An experimental and theoretical study of the magnetic polaron states of two-dimensional excitons in quantum wells based on semimagnetic semiconductors (Cd,Mn)Te is reported. It is shown that magnetic-polaron f...

    I. A. Merkulov, K. V. Kavokin, G. Mackh, B. Kuhn-Heinrich in Physics of the Solid State (1997)

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    Article

    Determination of the sign of the conduction-electron g factor in semiconductor quantum wells by means of the Hanle effect and spin-quantum-beat techniques

    A method of measuring the sign of the conduction-electron g factor in semiconductor quantum-wells is proposed, based on determination of the sense of electron-spin Larmor precession by the Hanle effect or spin-qu...

    V. K. Kalevich, B. P. Zakharchenya, K. V. Kavokin in Physics of the Solid State (1997)