-
Chapter
Optical Investigation of Coupled GaAs/Al0.3Ga0.7As Double Quantum Wells Separated by AIAs Barriers
Electronically symmetric coupled double quantum wells are structures where two quantum wells are separated by a thin barrier layer. Both experiment and theory show that when the barrier is so narrow that there...
-
Chapter
Excitons in the Two-Dimensional Hole Gas at the Al0.5Ga0.5As/GaAs Interface
Radiative recombination processes associated with the A1xGa1-xAs/GaAs heterojunction interface have been intensively studied recently. Yuan et al. [1] first observed the PL line on the low energy side of the GaAs...
-
Article
Investigation of GaNAsSb/GaAs and GaInNAsSb/GaNAs/GaAs Band Offsets
Heterojunction band offsets of GaNAsSb/GaAs, GaInNAsSb/GaAs, and GaInNAsSb/GaNAs/GaAs quantum well (QW) structures were measured by photoreflectance (PR) spectroscopy. These samples were grown by solid-source ...
-
Article
Above GaSb barrier in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity
Modulation spectroscopy in its Fourier-transformed mode has been employed to investigate the optical properties of broken gap ‘W’-shaped GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb quantum well structures designed to...
-
Article
Open AccessAdvanced optical characterization of AlGaAs/GaAs superlattices for active regions in quantum cascade lasers
In this work, AlGaAs/GaAs superlattices with layer composition imitating the active region of quantum cascade lasers emitting in the mid infrared spectral range were investigated. Using optical spectroscopy te...
-
Article
Open AccessPhotoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates
Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid- and long-wavelength infrared ra...