![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
DC conduction behavior of Bi3.15Nd0.85Ti3O12 thin films grown by RF-magnetron sputtering
The Bi3.15Nd0.85Ti3O12 (BNT) thin films were deposited on Pt(111)/Ti/SiO2/Si substrates by using RF-magnetron sputtering method and studied the ferroelectric and leakage current charateristics. The polarization –...
-
Article
GaN quantum dot UV light emitting diode
The fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1−xN (x~0.1) surface using Si ...
-
Article
Photoluminescence of strain-induced coupled InGaAs/GaAs quantum-dot pairs
Coupled quantum dot-pairs were fabricated by growing InP self-assembled islands as stressors on InGaAs/GaAs double quantum wells. State filling in the photoluminescence spectra was used to resolve the quantum ...