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Article
Defects in pulsed laser and thermal processed ion implanted silicon
The evolution of the nature and concentration of the defects produced by 100 or 300 keV As ions at fluences 1 to 4×10−12 cm−2 inn-type, Fz Silicon doped with 1015 to 1016 cm−3 has been studied as function of ther...
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Article
Defect annealing in phosphorus implanted silicon: A D.L.T.S. study
Deep-level transient spectroscopy (D.L.T.S.) has been applied to the determination of defects in ion implanted silicon. Preliminary results concerning defects introduced by 130 KeV phosphorous ion implantation...