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  1. No Access

    Article

    Deformation-Induced Transformations of Nanocrystalline Ge-Si Film During Indentation

    Thin films of Ge-Si with a duplex nanocrystalline structure were fabricated by magnetron co-sputtering and nanoindentations were made on these films. Transmission electron microscopy and Raman spectroscopy wer...

    Z. W. Xu, A. H. W. Ngan, J. G. Huang, X. K. Meng in MRS Online Proceedings Library (2006)

  2. No Access

    Article

    The structure and property characteristics of amorphous/nanocrystalline silicon produced by ball milling

    The structural transformation of polycrystalline Si induced by high energy ball milling has been studied. The structure and property characteristics of the milled powder have been investigated by x-ray diffrac...

    T. D. Shen, C. C. Koch, T. L. McCormick, R. J. Nemanich… in Journal of Materials Research (1995)

  3. No Access

    Article

    Effect of Fluorine on the Dopant Diffusion of Through-Oxide Implanted Boron In Si - A Correlation with Microstructural Defects

    In case of boron through-oxide implant, it has been shown that the knocked-in oxygen atoms segregate at initially nucleated dislocation sites during the incubation and no significant junction movement is detec...

    J. G. Huang, A. Lam, R. J. Jaccodine in MRS Online Proceedings Library (1992)

  4. No Access

    Article

    Stress Dependent Electrical Activation of Implanted Si IN GaAs - A Four Point Bending Study

    A four point bending experiment was conducted to study the effect of stress on the electrical activation of implanted 29Si in GaAs. The stress distribution in the SiNx-coated GaAs was quantitatively examined. 29S...

    J. G. Huang, R. J. Jaccodine, J. H. Huang, S. A. Schwarz… in MRS Online Proceedings Library (1991)