Page
%P
![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers
We report a comparative study of carrier dynamics in semiconductor saturable absorber mirrors (SESAMs) containing InGaAs quantum wells and InGaAsN quantum wells (QWs). The static and dynamic reflectivity spect...