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  1. No Access

    Article

    Morphological variations in AuxSiy nanostructures under variable pressure and annealing conditions

    Well-ordered, substrate symmetry-driven, AuxSiy structures of average size ~25 nm were formed under ultra-high vacuum (UHV) conditions using molecular beam epitaxy method. Post-annealing was done at 500 °C in thr...

    A. Rath, J. K. Dash, R. R. Juluri, P. V. Satyam in Applied Physics A (2015)

  2. No Access

    Article

    Observation of grain growth in swift heavy ion irradiated NiO thin films

    NiO thin films grown on Si(100) substrates by electron beam evaporation, were sintered at 500 °C and 700 °C. The films were irradiated with 120 MeV Au9+ ions. Irradiation had different effects depending upon the ...

    P. Mallick, Chandana Rath, J. K. Dash, R. Biswal… in Indian Journal of Physics (2010)