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  1. No Access

    Article

    Defects in pulsed laser and thermal processed ion implanted silicon

    The evolution of the nature and concentration of the defects produced by 100 or 300 keV As ions at fluences 1 to 4×10−12 cm−2 inn-type, Fz Silicon doped with 1015 to 1016 cm−3 has been studied as function of ther...

    A. Blosse, J. C. Bourgoin in Applied Physics A (1984)

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    Chapter

    Minority Carrier Traps in Electron Irradiated n-Type Germanium

    Minority carrier traps created by electron irradiation at room temperature in slightly doped n-type germanium have been studied using transient capacitance spectroscopy. Levels at 0.16 (H1), 0.30 (H2), 0.37 (H3) ...

    F. Poulin, J. C. Bourgoin in Recent Developments in Condensed Matter Physics (1981)

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    Article

    Defect annealing in phosphorus implanted silicon: A D.L.T.S. study

    Deep-level transient spectroscopy (D.L.T.S.) has been applied to the determination of defects in ion implanted silicon. Preliminary results concerning defects introduced by 130 KeV phosphorous ion implantation...

    J. Krynicki, J. C. Bourgoin in Applied physics (1979)

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    Chapter

    Techniques for Studying Ion Implantation In Diamond

    Measurements using electron paramagnetic resonance, optical absorption, Raman scattering and luminescence have been performed in ion implanted type IIa diamonds. Results are described which show how these tech...

    J. F. Morhange, R. Beserman, J. C. Bourgoin… in Ion Implantation in Semiconductors (1975)