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  1. No Access

    Article

    Effect of Al pre-deposition on AlN buffer layer and GaN film grown on Si (111) substrate by MOCVD

    In this study, we investigated the effect of Al pre-deposition time on GaN crystal quality. The GaN layer was grown on a Si (111) substrate by metal organic chemical vapor deposition using an AlN buffer layer....

    S. J. Bak, D. -H. Mun, K. C. Jung, J. H. Park, H. J. Bae… in Electronic Materials Letters (2013)

  2. No Access

    Article

    The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si+Er target

    We fabricated Er-doped silicon-rich silicon oxide (SRSO:Er) films by pulsed laser deposition. A Si+Er target consisting of an Er metallic strip and a silicon disk was adopted with a goal to achieve a convenien...

    J.S. Ha, G.Y. Sung, S. Lee, Y.R. Jang, K.H. Yoo, C.H. Bae, J.S. Jeon… in Applied Physics A (2004)

  3. No Access

    Article

    Interaction of low-energy nitrogen ions with an Si(111)-7×7 surface: STM and LEED investigations

    J.S. Ha, K.-H. Park, W.S. Yun, E.-H. Lee, S.-J. Park in Applied Physics A (1998)