-
Chapter and Conference Paper
Performance of a Piston-Expanded Bubble Chamber
The development of the liquid hydrogen bubble chamber as a detector of high energy charged particles comes as a natural outgrowth of the work done by D. A. Glaser. Glaser’s work showed by experiment1 and theory2 ...
-
Chapter and Conference Paper
Performance of an Air Expansion Engine
The end product of the process involving the engine under discussion is liquid nitrogen. This is obtained by cooling and liquefying air and distilling it. There are several methods of obtaining liquid air: by ...
-
Chapter and Conference Paper
Thermal Conductivity of Braided Superconductor Systems
A program to measure the thermal conductivity of braided superconductors in several epoxy-supported coil forms has been in progress for the last two years. This presentation covers only this portion of the pro...
-
Chapter
Supercritical Helium Refrigerator for Superconducting Power Transmission Cable Studies
The Brookhaven National Laboratory is engaged in the development of a superconducting ac power-transmission system. A cryoelectric test facility for evaluating the performance of flexible superconducting cable...
-
Article
Excimer Laser Assisted Deposition of GaAs, AlAs, and [Al,Ga]As from Lewis Acid-Base Adducts
Laser-assisted deposition of GaAs, AlAs and [Al,Ga]As thin films on Ge(100) substrates from trimethylgallium-trimethylarsenic and trimethylaluminum-trimethylarsenic Lewis acid-base adduct source materials is r...
-
Article
Excimer Laser-Assisted Movpe of Cdte on Gaas (100): Crystal Growth and Mechanisms
Excimer laser-assisted MOVPE has been used to deposit thin films of CdTe (111) on GaAs (100) substrates. Auger spectroscopy indicates that the films are stoichiometric and that carbon and oxygen contamination ...
-
Article
Photodissociation Dynamics of Alkyltellurides
The UV photodissociations of dimethyltelluride (CH3)2Te and diethyltelluride (C2Hs)2Te have been investigated by state-selective detection. Nascent populations of Te(5p Pjw) atoms produced by the photodissociatio...
-
Article
The Interaction of Laser Generated Methyl Radicals with Cd, Te, and CdTe Surfaces
The mechanism of the interaction of methyl radicals with Cd, Te, and CdTe surfaces has been studied in ultrahigh vacuum by Auger electron spectroscopy and thermal desorption mass spectrometry. Methyl radicals ...
-
Article
93rd annual convention podium and poster abstracts
-
Chapter
A Supercritical Helium Facility for Measuring High-Voltage Breakdown
Several groups working in the field of power transmission using superconducting cables have proposed the use of flexible cables [1,2]. In these cables, the insulation between the inner and outer conductors is a d...
-
Article
Status of MBE technology for the flexible manufacturing of HgCdTe focal plane arrays
A robust process has been developed for the reproducible growth of in-situ doped Hg1−xCdxTe:As alloys by molecular beam epitaxy. Net hole concentrations in excess of 5 x 1017 cm−3, with peak mobilities >200 cm2/V...
-
Article
Heteroepitaxy of HgCdTe(112) infrared detector structures on Si(112) substrates by molecular-beam epitaxy
High-quality, single-crystal epitaxial films of CdTe(112)B and HgCdTe(112)B have been grown directly on Si(112) substrates without the need for GaAs interfacial layers. The CdTe and HgCdTe films have been char...
-
Article
High Performance HgCdTe-Detectors Grown by Molecular Beam Epitaxy
Molecular beam epitaxy (MBE) offers benefits such as the capability for growth of compositionally-tailored heterostructures and in-situ do** of HgCdTe alloys. These capabilities were applied to the growth of...
-
Article
MBE Growth and Properties of HgCdTe Long Wave and Very Long Wave Infrared Detectors
In-situ doped p-on-n devices were grown by molecular beam epitaxy, and their structural, optical and electrical properties were evaluated. Significant progress has been made toward the growth of high performan...
-
Article
Molecular beam epitaxial growth and performance of integrated two-color HgCdTe detectors operating in the mid-wave infrared band
The first report of molecular beam epitaxial growth and performance of HgCdTe two-color detectors for the simultaneous detection of radiation at 4.1 and 4.5 μm is presented. In-situ doped devices with the n-p-...
-
Article
Molecular beam epitaxial growth and performance of HgCdTe-based simultaneous-mode two-color detectors
Molecular beam epitaxy was employed for the growth of HgCdTe-based n-p+-n device structures on (211)B oriented CdZnTe substrates. The device structures were processed as mesa isolated diodes, and operated as back...
-
Article
Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications
Molecular beam epitaxy has been employed to deposit HgCdTe infrared detector structures on Si(112) substrates with performance at 125K that is equivalent to detectors grown on conventional CdZnTe substrates. T...
-
Article
Integrated multi-sensor control of II–VI MBE for growth of complex IR detector structures
Next-generation HgCdTe infrared detectors and detector arrays require the growth of multilayer heterojunction structures with precisely controlled alloy composition and do** levels and minimal defect densiti...
-
Article
MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress
We review the rapid progress that has been made during the past three years in the heteroepitaxial growth of HgCdTe infrared detector device structures on Si substrates by molecular-beam epitaxy. The evolution...
-
Article
Integrated multi-sensor system for real-time monitoring and control of HgCdTe MBE
We describe an integrated real-time sensing and control system for monitoring and controlling substrate temperature, layer composition, and effusion cell flux during molecular beam epitaxial growth of HgCdTe e...
