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    Scaled nano-and microrelief of ordering regions in Al x Ga1 − x As/GaAs(100) epitaxial heterostructures

    The Al x Ga1 − x As/GaAs(100) heterostructures grown by MOS hydride epitaxy were studied using atomic force and scanning electron microscopy. Regions with an orde...

    E. P. Domashevskaya, P. V. Seredin… in Journal of Surface Investigation. X-ray, S… (2008)