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  1. No Access

    Article

    A transmission electron microscopy investigation of SiC films grown on SiC substrates by solid-source molecular beam epitaxy

    The relationship between the defect microstructure of SiC films grown by solid-source molecular-beam epitaxy on 4H and 6H–SiC substrates and their growth conditions, for substrate temperatures ranging between ...

    U. Kaiser, I. Khodos, P. D. Brown, A. Chuvilin… in Journal of Materials Research (1999)

  2. No Access

    Article

    The effect of growth condition on the structure of 2H – AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy

    The effects of substrate cleaning, nitridation time, and substrate temperature in the range 800–1000 °C on the microstructure of AlN/Si(111) films grown by simultaneous plasma-assisted molecular beam epitaxy h...

    U. Kaiser, P. D. Brown, I. Khodos, C. J. Humphreys… in Journal of Materials Research (1999)