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A transmission electron microscopy investigation of SiC films grown on SiC substrates by solid-source molecular beam epitaxy
The relationship between the defect microstructure of SiC films grown by solid-source molecular-beam epitaxy on 4H and 6H–SiC substrates and their growth conditions, for substrate temperatures ranging between ...
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The effect of growth condition on the structure of 2H – AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy
The effects of substrate cleaning, nitridation time, and substrate temperature in the range 800–1000 °C on the microstructure of AlN/Si(111) films grown by simultaneous plasma-assisted molecular beam epitaxy h...