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  1. No Access

    Article

    Time-resolved Coulomb collision of single electrons

    A series of recent experiments have shown that collision of ballistic electrons in semiconductors can be used to probe the indistinguishability of single-electron wavepackets. Perhaps surprisingly, their Coulo...

    J. D. Fletcher, W. Park, S. Ryu, P. See, J. P. Griffiths… in Nature Nanotechnology (2023)

  2. No Access

    Article

    A semiconductor photon-sorter

    The nonlinear optical response of a single quantum dot can be used to separate the one- and two-photon components of a weak laser beam.

    A. J. Bennett, J. P. Lee, D. J. P. Ellis, I. Farrer, D. A. Ritchie… in Nature Nanotechnology (2016)

  3. No Access

    Article

    All-electric all-semiconductor spin field-effect transistors

    Two quantum point contacts are used to respectively inject and detect spins by purely electrical means in an all-semiconductor spin transistor.

    Pojen Chuang, Sheng-Chin Ho, L. W. Smith, F. Sfigakis, M. Pepper… in Nature Nanotechnology (2015)

  4. No Access

    Article

    Electric control of the spin Hall effect by intervalley transitions

    Controlling spin-related material properties by electronic means is a key step towards future spintronic technologies. The spin Hall effect (SHE) has become increasingly important for generating, detecting and...

    N. Okamoto, H. Kurebayashi, T. Trypiniotis, I. Farrer, D. A. Ritchie… in Nature Materials (2014)

  5. No Access

    Chapter and Conference Paper

    Off-axis electron holography of focused ion beam milled GaAs and Si p-n junctions

    Si and GaAs p-n junctions have been characterised in the transmission electron microscope using off-axis electron holography. Focused ion beam milling was used to prepare parallel-sided membranes with thicknes...

    D Cooper, A C Twitchett, I Farrer, D A Ritchie… in Microscopy of Semiconducting Materials (2005)

  6. No Access

    Article

    Growth Temperature Dependence of Size Distribution of Self-Assembled Inas Quantum Dots on Gaas(001): From Diffusion-To Strain-Limited Growth

    We have investigated the molecular beam epitaxy (MBE) growth of buried InAs quantum dots on GaAs (001) surface, as a function of deposition temperature, by transmission electron microscopy (TEM) and photolumin...

    J. Yuan, G.D. Lian, Z.Y. Li, D.A. Ritchie, R. M. Thompson… in MRS Online Proceedings Library (1999)