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31 Result(s)
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Article
A rail-to-rail input stage with constant signal behavior in 0.12 μm CMOS
This paper introduces a new fully differential low-voltage rail-to-rail input stage structure, which possesses a constant small- and large-signal behavior over the entire input common-mode range, and is suitab...
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Article
A current-mode continuous-time filter for software defined radio solutions
A 3rd-order continuous-time current-mode filter in 65 nm CMOS technology is presented. The filter has a switchable cut-off frequency between 1.1 and 4.4 MHz and is designed for software defined radio on chip (...
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Chapter
System-Level Design
This chapter gives an overview on the system design and its different methods to implement it in the whole development process. Various aspects that have to be taken into consideration to reach the described g...
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Article
A 122 TΩ Hz transimpedance bandwidth product BiCMOS optical sensor front-end with a 54.7 dB voltage-controlled photo-sensitivity range
An optical sensor front-end with integrated PIN photodiode in 0.6 μm BiCMOS technology intended for universal optical storage operation is presented. It is based on a mixed current conveyor and voltage amplifi...
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Article
Rail-to-rail BiCMOS operational amplifier using input signal adapters with floating outputs
An operational amplifier with rail-to-rail input and output voltage range in 0.6 μm BiCMOS technology is presented. Two simple input signal adapters with floating outputs serving as pre-stages are introduced. ...
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Article
A BJT translinear loop based optoelectronic integrated circuit with variable transimpedance for optical storage systems
A 0.35 μm SiGe BiCMOS optical receiver with voltage-controlled transimpedance is presented. A variable-gain current amplifier using a BJT translinear loop is applied. A transimpedance dynamic range of 1554 (63...
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Article
Sunlight-proof optical distance measurements with a dual-line lock-in time-of-flight sensor
This work describes time-of-flight distance measurements with a line sensor based on the correlation principle. It is capable of suppressing maximum bright sunlight and even more electronically in each pixel a...
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Article
Double-Gilbert mixer with enhanced linearity in 65 nm low-power CMOS technology
An innovative double-Gilbert-type down-conversion mixer is presented. It is designed and fabricated in a 65 nm low-power digital CMOS process. The mixer is based on the simple Gilbert-type mixer and utilizes a...
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Chapter
Clocked Nanometer CMOS Comparators
A circuit block, which is mostly used in the link between the analog and the digital domain, e.g. in an analog-digital converter (ADC), is the clocked, regenerative comparator. This type of comparator is imple...
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Article
Low-power 10 Gb/s inductorless inverter based common-drain active feedback transimpedance amplifier in 40 nm CMOS
This study presents an inductorless 10 Gb/s transimpedance amplifier (TIA) implemented in a 40 nm CMOS technology. The TIA uses an inverter with active common-drain feedback (ICDF-TIA). The TIA is followed by...
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Article
A 10 Gb/s 0.25 μm SiGe modulator driver for photonic-integration
A 10 Gb/s modulator driver in SiGe 0.25 μm BiCMOS technology with a chip area of only 0.54 mm2 is presented. The intentions of designing this modulator driver are to amplify small incoming data signals at 10 Gb/s...
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Article
8 Gbits/s inductorless transimpedance amplifier in 90 nm CMOS technology
This work presents the design and the measured performance of a 8 Gb/s transimpedance amplifier (TIA) fabricated in a 90 nm CMOS technology. The introduced TIA uses an inverter input stage followed by two comm...
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Article
CMOS integrated MPP tracker with analog power measurement at the PV converter input
An integrated converter controller with maximum power point (MPP) regulation in 0.35 μm CMOS for photovoltaic (PV) applications is reported. The implemented MPP tracker bases on a perturb and observe algorithm...
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Book
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Chapter
Introduction
In this introduction the motivation for investigating deep-sub-micron and nanometer CMOS comparators in detail is described. Furthermore, comparators are classified and different types of analog continuous-tim...
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Chapter
State of the Art
Although there are many papers on comparators in micron and submicron CMOS technology, in the following only deep-submicron and nanometer comparators are summarized.
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Chapter
Nanometer CMOS Technology
In this chapter the CMOS technologies used for design and fabrication of comparator test chips described in this book are introduced. The MOS transistor characteristics in nanometer CMOS are shown.
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Chapter
Conclusion and Comparison
A key element in an ADC is the comparator. It compares an input signal with a reference voltage and has as a result a logic stage, which indicates whether the signal is lower or higher.
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Chapter
Measurement Circuits and Setup
In this chapter circuits being necessary on chip to be able to measure the performance of the investigated comparators are described. First a buffer with a very low input capacitance and a 50 $$\Om...
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Chapter
Comparators in 65 nm CMOS
Two comparators in 65 nm low-power CMOS are introduced in this chapter. First a high-speed comparator for a sample rate of 7 GHz inclusive measured results is presented. The second comparator is optimized with...
