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Hiroshi Imamura
Materials Science
Characterization and Evaluation of Materials
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Article
Open AccessPublisher Correction: Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide transistors
An amendment to this paper has been published and can be accessed via a link at the top of the paper.
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Article
Open AccessAmbipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide transistors
Ionic gating is known as a powerful tool for investigation of electronic functionalities stemming from low voltage transistor operation to gate-induced electronic phase control including superconductivity. Two...
