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  1. No Access

    Article

    Analysis of GaN crystal growth mechanism in liquid-phase epitaxial Na-flux method

    The liquid-phase epitaxial growth (LPE) of GaN crystals on the MOCVD-GaN substrate using the Na-flux method was investigated under various growth times, 30, 60, 100, and 150 h. The morphology properties of as-...

    Gemeng Huang, Hangfei Hao, Chen Yang, Ming Ma, Song **a… in Journal of Materials Science (2024)

  2. No Access

    Article

    Effects of Growth Temperature on Morphology of GaN Crystals by Na Flux Liquid Phase Epitaxial Method

    The morphology of GaN crystals grown in a temperature range of 800–860°C by the Na flux liquid phase epitaxial (LPE) method was observed by the optical microscope and the scanning electron microscope (SEM). Si...

    Hangfei Hao, ** Wu, Zhenrong Li, Shiji Fan in Journal of Electronic Materials (2019)

  3. No Access

    Article

    Growth Temperature Dependence of Morphology of GaN Single Crystals in the Na-Li-Ca Flux Method

    In this paper, the effect of growth temperature on the morphology and transparency of the GaN crystals obtained by the Li-Ca-added Na Flux method was studied. Addition of Li-Ca was attempted to control the gro...

    ** Wu, Hangfei Hao, Zhenrong Li, Shiji Fan, Zhuo Xu in Journal of Electronic Materials (2018)

  4. No Access

    Article

    Phase transition and piezoelectric properties of (1 − x)K0.5Na0.5NbO3–xLiSbO3 ceramics by hydrothermal powders

    KNbO3, NaNbO3 and LiSbO3 powders were synthesized by a hydrothermal route have been used to prepare (1 − x)K0.5Na0.5NbO3–xLiSbO3 (KNN–LS; x = 0.00–0.08) ceramics. The effects of LiSbO3 do** on the structures of...

    Wenlong Liu, Guoqiang Tan, Peng **ong… in Journal of Materials Science: Materials in… (2014)