29 Result(s)
within
H. Fujiwara
Characterization and Evaluation of Materials
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Article
Nanocrystalline nickel dispersed with nano-size WO3 particles synthesized by electrodeposition
A new class of bulk nanocrystalline nickel dispersed with nano-scale WO3 particles has been synthesized by conventional electrodeposition to clarify the effect of the presence of nano-size dispersions on the stre...
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Article
An Antiferromagnetic Semiconductor Based on Ethylenedioxytetrathiafulvalenothioquinone-1,3-dithiolemethide, (EDO-TTFVS)·FeBr4
The 1:1 FeBr4 − salt of a newly synthesized donor, ethylenedioxytetrathiafulvalenothioquinone-1,3-dithiolemethide (EDO-TTFVS) was prepared by an electrochemical oxidation. A crystal struct...
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Article
Anomalous Magnetic-Field-Hysteresis of Quantum Oscillations in κ-(BETS)2FeBr4
Shubnikov-de Haas (SdH) oscillations are measured in the organic conductor, κ-(BETS)2FeBr4. In the canted antiferromagnetic (CAF) phase (μ0 H < μ0 H ...
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Article
Field-Induced Anomaly in the Magnetoresistance of (EDO-TTFVO)2FeCl4 below 1.5 K
The magnetoresistance (MR) for a new organic conductor, β”-(EDOTTFVO)2 FeCl4 which exhibits metallic temperature dependence of the resistivity down to 0.3 K, was studied. Remarkable and unusual features were foun...
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Article
Magnetic Ion Salts Using Selenium Analogues of a New Donor Molecule, Benzotetrathiafulvalenothioquinone-1,3-dithiolemethide
The 2:1 salts of two selenium analogues of benzotetrathiafulvaleno- thioquinone-1,3-dithiolemethide (1), [2’(X = S, Se) and 3’(X = S)] with magnetic FeX 4 - an...
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Article
Magnetic ion salts using selenium analogues of a new donor molecule, benzotetrathiafulvalenothioquinone-1,3-dithiolemethide
The 2:1 salts of two selenium analogues of benzotetrathiafulvaleno-thioquinone-1,3-dithiolemethide (1), [2′(X=S, Se) and3′(X=S)] with magnetic FeX 4 − and non-...
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Article
Pressure Effect on Insulating State in Ferrimagnetic π−d System (EDT-TTFVO)2 FeBr4
To explore novel physical phenomena related to strong π−d interaction, we measured the resistivity (ρ) and magnetoresistance of the first organic ferrimagnetic π−d system, (EDT-TTFVO)2FeBr4 under high pressures u...
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Article
Pressure effect on insulating state in ferrimagneticπ-d system (EDT-TTFVO)2FeBr4
To explore novel physical phenomena related to strong π-d interaction, we measured the resistivity (ρ) and magnetoresistance of the first organic ferrimagnetic π-d system, (EDT-TTFVO)2FeBr4 under high pressures u...
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Article
Field-induced anomaly in the magnetoresistance of (EDO-TTFVO)2FeCl4 below 1.5 K
The magnetoresistance (MR) for a new organic conductor, β″-(EDO-TTFVO)2FeCl4 which exhibits metallic temperature dependence of the resistivity down to 0.3 K, was studied. Remarkable and unusual features were foun...
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Article
Anomalous magnetic-field-hysteresis of quantum oscillations in κ-(BETS)2FeBr4
Shubnikov-de Haas (SdH) oscillations are measured in the organic conductor, κ-(BETS)2FeBr4. In the canted antiferromagnetic (CAF) phase (μ0H<μ0Hc=5.2 T), hysteresis is clearly observed in both the background resi...
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Article
An antiferromagnetic semiconductor based on ethylenedioxytetrathiafulvalenothioquinone-1,3-dithiolemethide, (EDO-TTFVS)·FeBr4
The 1:1 FeBr 4 − salt of a newly synthesized donor, ethylenedioxytetrathiafulvalenothioquinone-1,3-dithiolemethide (EDO-TTFVS) was prepared by an electrochemic...
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Article
Flat-band Voltage Shift of MOS Capacitors with Tantalum Nitride Gate Electrodes Induced by Post Metallization Annealing
We have investigated the flat-band voltage (VFB) shifts of tantalum nitride gate MOS capacitors prepared by two methods. One is CVD-tantalum nitride (CVD-TaN) deposited by the chemical vapor deposition technique ...
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Chapter
Lasing Spectroscopy of Single Microspheres
In 1908, G. Mie derived a rigorous equation of light scattering from a single homogeneous sphere by solving Maxwell’s equation [1]. When the refractive index of the microsphere is higher than that of the surround...
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Article
Electron trap** center and SnO2-do** mechanism of indium tin oxide
Indium tin oxide (ITO) and Er3+-doped ITO powders were prepared by a conventional ceramic method. The density of ITO powders and optical absorption spectra of Er3+ ions in Er3+-doped ITO were measured as a functi...
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Article
Real Time Optics of Amorphous Silicon Solar Cellfabrication on Textured Tin-Oxide-Coated Glass
A rotating-compensator multichannel ellipsometer has been used to measure the four spectra (1.4-4.0 eV) that describe the Stokes vector of the light beam reflected from the surface of an amorphous silicon (a-S...
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Article
Real Time Spectroscopic Ellipsometry Studies of the Solid Phase Crystallization of Amorphous Silicon
We have introduced real time spectroscopic ellipsometry (RTSE) for characterization of the solid phase crystallization (SPC) of intrinsic and n-type amorphous silicon (a-Si:H) thin films. RTSE has several adva...
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Article
Amorphous/Microcrystalline Phase Control in Silicon Film Deposition for Improved Solar Cell Performance
Real time optical studies have provided insights into the growth of hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si:H) thin films by plasma-enhanced chemical vapor deposition as a f...
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Article
Nucleation of p-Type Microcrystalline Silicon on Amorphous Silicon for n-i-p Solar Cells Using B(CH3)3 And BF3 Dopant Source Gases
Real time spectroscopic ellipsometry (RTSE) has been applied to identify optimal conditions for the nucleation and growth of 120 Å microcrystalline silicon (μc-Si:H) p-layers by rf plasma-enhanced chemical vap...
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Article
Characterization of Monolayer-Level Composition and Optical Gap Profiles in Amorphous Silicon-Carbon Alloy Bandgap-Modulated Structures
Over the past few years we have applied real time spectroscopie ellipsometry (RTSE) to characterize the structural, compositional, and optical gap profiles in continuously-graded amorphous silicon-carbon alloy...
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Article
Structural and Optical Properties of a-Si:H/μc-Si:H:B Junctions in the a-Si:H-Based n-i-P Solar Cell Configuration
We have extended previous real time spectroscopie ellipsometry (RTSE) capabilities in order to investigate the effects of H2-plasma treatment of i-type hydrogenated amorphous silicon (a-Si:H) on the deposition of...
