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  1. No Access

    Article

    A Novel Surface Preparation and Post-Etch Removal Technique for InGaAs Sidewalls

    This paper describes in detail a surface preparation, and post-etch removal technique developed for InGaAs sidewalls. It illustrates the results demonstrating the effect of sidewall post-etch, surface preparat...

    S. A. Tabatabaei, G. A. Porkolab, S. Agarwala… in MRS Online Proceedings Library (1997)

  2. No Access

    Article

    Optical Characterization of AlInP/GaAs Heterostructures

    A 45 period GaAs/Al0.54In0.46P superlattice was grown by molecular beam epitaxy using valved solid-sources to supply both the arsenic (As4) and the phosphorus (P2) group V fluxes. The room temperature optical tra...

    F.G. Johnson, G.E. Kohnke, G.W. Wicks in MRS Online Proceedings Library (1993)

  3. No Access

    Article

    Use of Valved, Solid Group V Sources for the Growth of GaAs/GaInP Heterostructures by Molecular Beam Epitaxy

    We report on the first growth of GaAs/Ga0.5In0.5P heterostructures by conventional molecular beam epitaxy using solid-source valved crackers to supply both the arsenic and the phosphorus fluxes. By regulating the...

    F. G. Johnson, G. W. Wicks, R. E. Viturro, R. Laforce in MRS Online Proceedings Library (1992)