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    Investigation of 4H-SiC epitaxial layers implanted by Al ions

    4H-SiC epitaxial layers 26 μm thick with N d −N a = 1 × 1015 cm−3 grown by the CVD method on ...

    E. V. Kolesnikova, E. V. Kalinina… in Journal of Surface Investigation. X-ray, S… (2009)