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  1. No Access

    Article

    Structure and friction-reducing property of the sulfide layer produced by ion sulfuration

    Sulfide layers with a certain thickness were made on the surface of 1045 and 52100 steels by means of the low-temperature ion sulfuration technique. Metallography, scanning electron microscope (SEM) + energy-d...

    Ning Zhang, Da-Ming Zhuang, Yan-Hua Wang… in Journal of Materials Engineering and Perfo… (2000)

  2. No Access

    Article

    Local segregation in Cu-In precursors and its effects on microstructures of selenized CuInSe2 thin films

    Local segregation in Cu-In precursors and its effects on the element distribution and microstructures of selenized CuInSe2 thin films were investigated. Cu-In precursors with an ideal total mole ratio of Cu to In...

    Ling Fang, Gong Zhang, Da-ming Zhuang… in Journal of Central South University of Tec… (2005)

  3. No Access

    Article

    Study of Cu–In–Ga precursor for Cu(In,Ga)Se2 thin film prepared by the two-stage process

    Cu–In–Ga precursor thin films were deposited onto soda lime glass by magnetron cosputtering CuIn and CuGa alloy targets. After that, Cu(In,Ga)Se2(CIGSe) absorbers were formed by selenizing those alloy precursors ...

    Jiang Liu, Da-Ming Zhuang, He-**n Luan, Min **e… in Journal of Materials Research (2012)

  4. No Access

    Article

    Surface evolution of sputtered Cu(In,Ga)Se2 thin films under various annealing temperatures

    In this work, copper indium gallium selenide (CIGS) thin films were prepared by sputtering CIGS quaternary target and subsequent annealing under Se atmosphere in the 240–550 °C range. X-ray diffraction (XRD),...

    Jun-feng Han, Liang-qi Ouyang… in Journal of Materials Science: Materials in… (2015)