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    Trap Charge Density at Interfaces of MOCVD Pt(Ir)/PZT/Ir(Ti/SiO2/Si) Structures

    A method providing estimation of the trap density at metal/ferroelectric interfaces of a depleted ferroelectric film located between back-to-back Schottky barriers has been developed. The method is based on th...

    L. A. Delimova, I. V. Grekhov, D. V. Mashovets… in MRS Online Proceedings Library (2006)