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    Comparison of Amorphous and Polycrystalline Tungsten Nitride Diffusion Barrier for MOCVD-Cu Metallization

    An amorphized tungsten nitride diffusion barrier is compared with that of polycrystalline tungsten nitride preventing the diffusion of copper into Si during post annealing processes at 600–800 °C for 30 min. E...

    Chul Soon Kwon, Dong Joon Kim, Chang Woo Lee… in MRS Online Proceedings Library (1994)