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  1. No Access

    Article

    Nanothick Layer Transfer of Hydrogen-Implanted Wafer Using Polysilicon Sacrificial Layer

    A fabrication method of 2-D nanostructure materials applied for forming nanothick SOI materials without using post-thinning processes is presented in this paper. The thickness of SOI layer is precisely control...

    C. H. Huang, C. L. Chang, Y. Y. Yang, T. Suryasindhu… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Using Thermal Oxidation and Rapid Thermal Annealing on Polycrystalline-SiGe for Ge Nanocrystals

    In this paper, simple techniques were proposed to fabricate germanium nanocrystal capacitors by one-step thermal oxidation and/or rapid thermal annealing on polycrystalline-SiGe (poly-SiGe) deposited with a LP...

    Chyuan-Haur Kao, C. S. Lai, M. C. Tsai, C. H. Lee… in MRS Online Proceedings Library (2008)

  3. No Access

    Article

    Layer Transfer of Hydrogen-Implanted Silicon Wafers by Thermal-Microwave Co-Activation

    “Thermal-microwave co-activation process” is a novel thin-film transferring technology to fabricating Silicon on Insulator (SOI) material. This technology can fully transfer large-area silicon thin film onto a...

    Y. Y. Yang, C. H. Huang, Y.-K. Hsu, S.-J. Jeng, C.-C. Tai… in MRS Online Proceedings Library (2006)