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Article
Open AccessSelf-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide
Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemica...
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Article
Open AccessUnravelling the Chemical Influence of Water on the PMMA/Aluminum Oxide Hybrid Interface In Situ
Understanding the stability of chemical interactions at the polymer/metal oxide interface under humid conditions is vital to understand the long-term durability of hybrid systems. Therefore, the interface of u...
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Article
Open AccessIn Situ Characterization of the Initial Effect of Water on Molecular Interactions at the Interface of Organic/Inorganic Hybrid Systems
Probing initial interactions at the interface of hybrid systems under humid conditions has the potential to reveal the local chemical environment at solid/solid interfaces under real-world, technologically rel...
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Article
Open AccessUHV and Ambient Pressure XPS: Potentials for Mg, MgO, and Mg(OH)2 Surface Analysis
The surface sensitivity of x-ray photoelectron spectroscopy (XPS) has positioned the technique as a routine analysis tool for chemical and electronic structure information. Samples ranging from ideal model sys...