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    Random Telegraph Noise in 30 nm FETs with Conventional and High-κ Dielectrics

    The magnitude of fractional current variation in ultra-small (30 nm channel length) MOSFETs due to single charge trap**-detrap** events at any position within the gate dielectric is studied using numerical...

    Angelica Lee, Andrew R. Brown, Asen Asenov… in Journal of Computational Electronics (2004)