4 Result(s)
within
Andreas Schulze
Materials Science
Characterization and Evaluation of Materials
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Article
Characterizing the Two-Dimensional Do** Concentration inside Silicon Nanowires Using Scanning Spreading Resistance Microscopy
The characterization of doped regions inside silicon nanowire structures poses a challenge which must be overcome if these structures are to be incorporated into future electronic devices. Precise cross-sectio...
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Article
Quantitative Two-Dimensional Carrier Map** in Silicon Nanowire-Based Tunnel-Field Effect Transistors Using Scanning Spreading Resistance Microscopy
The successful implementation of silicon nanowire (NW)-based tunnel-field effect transistors (TFET) critically depends on gaining a clear insight into the quantitative carrier distribution inside such devices....
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Article
Effect of Initial Growth and Seeding Conditions on Boron Doped Hot Filament Diamond Films
Boron doped CVD diamond has been extensively studied in bulk form but little has been published regarding the effects that the initial seeding and growth conditions can have on the characteristics of the initi...
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Article
Structural and electrical characterization of carbon nanotube interconnects by combined transmission electron microscopy and scanning spreading resistance microscopy
The use of carbon nanotubes (CNT) as interconnects in future integrated circuits (IC) is being considered as a replacement for copper. As this research needs also innovative metrology solutions, we have develo...
